Effects of electrode material and configuration on the characteristics of planar resistive switching devices

H. Y. Peng; L. Pu; J. C. Wu; D. Cha; J. H. Hong; W. N. Lin; Y. Y. Li; J. F. Ding; A. David; K. Li; T. Wu

doi:10.1063/1.4827597

journal article·2013-11-01Open access

Effects of electrode material and configuration on the characteristics of planar resistive switching devices

H. Y. Peng, L. Pu, J. C. Wu, D. Cha, J. H. Hong, W. N. Lin, Y. Y. Li, J. F. Ding, A. David, K. Li, T. Wu

APL Materials· Volume 1· Issue 5

Publisher page Open full text

Source abstract

Abstract

We report that electrode engineering, particularly tailoring the metal work function, measurement configuration and geometric shape, has significant effects on the bipolar resistive switching (RS) in lateral memory devices based on self-doped SrTiO3 (STO) single crystals. Metals with different work functions (Ti and Pt) and their combinations are used to control the junction transport (either ohmic or Schottky-like). We find that the electric bias is effective in manipulating the concentration of oxygen vacancies at the metal/STO interface, influencing the RS characteristics. Furthermore, we show that the geometric shapes of electrodes (e.g., rectangular, circular, or triangular) affect the electric field distribution at the metal/oxide interface, thus plays an important role in RS. These systematic results suggest that electrode engineering should be deemed as a powerful approach toward controlling and improving the characteristics of RS memories.

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Research context

OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Electronic and Structural Properties of Oxides

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Nanyang Technological University 1 Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, , 21 Nanyang Link, Singapore 637371, Singapore

Corporate Research and Development Center 2 Advanced LSI Technology Laboratory, , Toshiba Corporation, Kawasaki 212-8582, Japan

Sichuan University 3 Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, , Chengdu 610064, China

King Abdullah University of Science and Technology 4 Imaging and Characterization Core Lab, , Thuwal 23955, Saudi Arabia

King Abdullah University of Science and Technology 5 Materials Sciences and Engineering, , Thuwal 23955, Saudi Arabia

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