Electronic and structural properties of rutile-type Ge0.58Sn0.42O2/SnO2 heterostructure grown on TiO2 substrate
Source abstract
Abstract
The electronic and structural properties of r-Ge0.58Sn0.42O2/r-SnO2 heterostructure on isostructural r-TiO2 substrate grown by mist chemical vapor deposition were analyzed. The band alignment of the r-Ge0.58Sn0.42O2/r-SnO2 heterointerface was evaluated by x-ray photoelectron spectroscopy. The conduction- and valence-band offsets are determined to be 0.30 ± 0.08 eV and 0.28 ± 0.08 eV, respectively. Coherent five-period r-GexSn1−xO2/r-SnO2 superlattices on r-TiO2 substrates were fabricated. X-ray diffraction measurements, cross-sectional transmission electron microscopy imaging, and energy dispersive x-ray spectroscopy mapping suggest that r-GexSn1−xO2 and r-SnO2 layers were periodically and coherently grown on a r-TiO2 substrate. These results show the potential of the r-GexSn1−xO2/r-SnO2 system for applications to heterojunction devices.
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Research context
OpenAlex topics: Gas Sensing Nanomaterials and Sensors · ZnO doping and properties · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Material Chemistry, Kyoto University 1 , Kyoto 615-8510,
The Electron Microscopy Center, Tohoku University 2 , Sendai 980-8577,
Research Organization of Science and Technology, Ritsumeikan University 3 , Kusatsu 525-8577,
Funding
University Fellowship Creation Project for Creating Scientific and Technological Innovation · Japan Society for the Promotion of Science
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