Temperature and bias voltage dependences of magnetic tunnel junction with FeAlSi electrode
Source abstract
Abstract
We fabricated magnetic tunnel junctions (MTJs) with FeAlSi free layers and investigated the tunnel magnetoresistance (TMR) properties. We found that the temperature and bias voltage dependences of the TMR effect in FeAlSi-MTJs were almost the same as MTJs with Fe free layers despite the low Curie temperature of FeAlSi. In the inelastic electron tunneling spectroscopy measured at low temperatures, the relatively large cutoff energy of magnon excitation at the FeAlSi and MgO interface was confirmed. In addition, we studied for the first time the exchange stiffness constant of FeAlSi films by Brillouin light scattering. The determined value of the stiffness constant of FeAlSi was 14.3 (pJ/m), which was similar to that of Fe. Both the large magnon cutoff at the interface and the stiffness constant of FeAlSi are considered to be the reason for the good temperature and voltage dependences of FeAlSi-MTJs.
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Research context
OpenAlex topics: Magnetic properties of thin films · Heusler alloys: electronic and magnetic properties · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Francis Bitter Magnet Laboratory, Plasma Science and Fusion Center, Massachusetts Institute of Technology 1 , Cambridge, Massachusetts 02139, USA
Department of Applied Physics, Graduate School of Engineering, Tohoku University 2 , Sendai 980-8579, Japan
Department of Materials Science and Engineering, Massachusetts Institute of Technology 3 , Cambridge, Massachusetts 02139, USA
Department of Electronic Engineering, Graduate School of Engineering 4 , , Sendai 980-8579, Japan
Tohoku University 4 , , Sendai 980-8579, Japan
Center for Science and Innovation in Spintronics (Core Research Cluster) Organization for Advanced Studies, Tohoku University 5 , Sendai 980-8577, Japan
Department of Physics, Massachusetts Institute of Technology 6 , Cambridge, Massachusetts 02139, USA
Funding
Japan Society for the Promotion of Science · New Energy and Industrial Technology Development Organization
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Show source-provided references
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