Thin films as practical quantum materials: A status quo and beyond
Source abstract
Abstract
Quantum materials have been in the limelight for several years now. These materials exhibit intriguing quantum phenomena, which, when harnessed properly, promise extraordinary advancements across various scientific and technological domains. To fully exploit their potential, it is imperative to synthesize such quantum materials in thin film form so that they are compatible with well-established device fabrication techniques. In this perspective, an overview of the current status and future directions of thin film quantum material synthesis is provided. The criteria for quantum materials are discussed, as well as the many benefits of preparing them as thin films. Prominent deposition techniques such as molecular beam epitaxy and chemical vapor deposition are reviewed along with potential contenders. Despite challenges, progress in thin film quantum material technology holds the potential to realize practical devices with unprecedented functionalities.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Electronic and Structural Properties of Oxides · Quantum Dots Synthesis And Properties · Topological Materials and Phenomena
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Chemical and Biological Engineering, Korea University , Seoul 02841,
Funding
National Research Foundation of Korea
References (99)
Show source-provided references
1. Materials and the development of civilization and science10.1126/science.148.3672.908 ↗
2. The transistor, A semi-conductor triode10.1103/physrev.74.230 ↗
3. A history of the invention of the transistor and where it will lead us10.1109/4.643644 ↗
4. The future transistors10.1038/s41586-023-06145-x ↗
5. Emergent functions of quantum materials10.1038/nphys4274 ↗
6. The 2021 quantum materials roadmap10.1088/2515-7639/abb74e ↗
7. Unconventional superconductivity in magic-angle graphene superlattices10.1038/nature26160 ↗
8. Quantum breakdown of superconductivity in low-dimensional materials10.1038/s41567-020-0905-x ↗
9. Nematicity and competing orders in superconducting magic-angle graphene10.1126/science.abc2836 ↗
10. Model for a quantum Hall effect without Landau levels: Condensed-matter realization of the ‘parity anomaly10.1103/physrevlett.61.2015 ↗
11. Experimental realization of a three-dimensional topological insulator, Bi2Te310.1126/science.1173034 ↗
12. Colloquium: Topological insulators10.1103/revmodphys.82.3045 ↗
13. Composite-fermion approach for the fractional quantum Hall effect10.1103/physrevlett.63.199 ↗
14. How real are composite fermions?10.1103/physrevlett.71.3850 ↗
15. Non-Abelian states of matter10.1038/nature08915 ↗
16. Optically pumped NMR evidence for finite-size skyrmions in GaAs quantum wells near Landau level filling v = 110.1103/physrevlett.74.5112 ↗
17. Observation of spontaneous ferromagnetism in a two-dimensional electron system10.1073/pnas.2018248117 ↗
18. Quantum spin liquids10.1126/science.aay0668 ↗
19. Active crystal growth techniques for quantum materials10.1146/annurev-matsci-070616-124006 ↗
20. Quantum materials discovery from a synthesis perspective10.1038/nmat5010 ↗
21. Topological quantum materials from the viewpoint of chemistry10.1021/acs.chemrev.0c00732 ↗
22. Materials discovery by flux crystal growth: Quaternaryand higher order oxides10.1002/anie.201102676 ↗
23. 2012
24. A novel quasi-one-dimensional topological insulator in bismuth iodide β-Bi4I410.1038/nmat4488 ↗
25. Giant anomalous Hall effect in a ferromagnetic kagome-lattice semimetal10.1038/s41567-018-0234-5 ↗
26. Axionic charge-density wave in the Weyl semimetal (TaSe4)2I10.1038/s41586-019-1630-4 ↗
27. Observation of a large-gap topological-insulator class with a single Dirac cone on the surface10.1038/nphys1274 ↗
28. A tunable topological insulator in the spin helical Dirac transport regime10.1038/nature08234 ↗
29. Nonequilibrium electron and lattice dynamics of strongly correlated Bi2Sr2 CaCu2O8+δ single crystals10.1126/sciadv.aap7427 ↗
30. Introduction: Quantum materials10.1021/acs.chemrev.0c01322 ↗
31. The discovery of superconductivity10.1063/1.3490499 ↗
32. New method for high-accuracy determination of the fine-structure constant based on quantized Hall resistance10.1103/physrevlett.45.494 ↗
33. The quantized Hall effect10.1103/revmodphys.58.519 ↗
34. Quantum spin Hall effect and topological phase transition in HgTe quantum wells10.1126/science.1133734 ↗
35. Quantum spin Hall insulator state in HgTe quantum wells10.1126/science.1148047 ↗
36. The birth of topological insulators10.1038/nature08916 ↗
37. Crystal time-reversal symmetry breaking and spontaneous Hall effect in collinear antiferromagnets10.1126/sciadv.aaz8809 ↗
38. Emerging research landscape of altermagnetism10.1103/physrevx.12.040501 ↗
39. Altermagnetism with non-collinear spins10.1038/s41535-024-00626-6 ↗
40. Topological electronics10.1038/s42005-021-00569-5 ↗
41. Topological spintronics and magnetoelectronics10.1038/s41563-021-01138-5 ↗
42. Spin–orbit torques based on topological materials10.1021/accountsmr.2c00123 ↗
43. Resonating valence bonds: A new kind of insulator?10.1016/0025-5408(73)90167-0 ↗
44. Fractionalized excitations in the spin-liquid state of a kagome-lattice antiferromagnet10.1038/nature11659 ↗
45. Search for Majorana fermions in superconductors10.1146/annurev-conmatphys-030212-184337 ↗
46. Hunting for Majoranas10.1126/science.ade0850 ↗
47. Non-Abelian anyons and topological quantum computation10.1103/revmodphys.80.1083 ↗
48. Interference Measurements of Non-Abelian e/4 & e/2 Abelian Quasiparticle Braiding10.1103/physrevx.13.011028 ↗
49. Topological quantum chemistry10.1038/nature23268 ↗
50. A complete catalogue of high-quality topological materials10.1038/s41586-019-0954-4 ↗
51. All topological bands of all nonmagnetic stoichiometric materials10.1126/science.abg9094 ↗
52. Signatures of majorana fermions in hybrid superconductor-semiconductor nanowire devices10.1126/science.1222360 ↗
53. Observation of Majorana fermions in ferromagnetic atomic chains on a superconductor10.1126/science.1259327 ↗
54. Exponential protection of zero modes in Majorana islands10.1038/nature17162 ↗
55. From colossal to zero: Controlling the anomalous Hall effect in magnetic Heusler compounds via Berry curvature design10.1103/physrevx.8.041045 ↗
56. The properties and prospects of chemically exfoliated nanosheets for quantum materials in two dimensions10.1063/5.0038644 ↗
57. A brief review of atomic layer deposition: From fundamentals to applications10.1016/j.mattod.2014.04.026 ↗
58. Future of dynamic random-access memory as main memory10.1557/mrs.2018.95 ↗
59. 2023
60. Formation of a high quality two-dimensional electron gas on cleaved GaAs10.1063/1.103121 ↗
61. Cleaved edge overgrowth for quantum wire fabrication10.1016/0022-0248(93)90746-j ↗
62. Coupled quantum dots fabricated by cleaved edge overgrowth: From artificial atoms to molecules10.1126/science.278.5344.1792 ↗
63. GaAs tetrahedral quantum dot structures fabricated using selective area metalorganic chemical vapor deposition10.1063/1.105026 ↗
64. From the bottom-up: Toward area-selective atomic layer deposition with high selectivity10.1021/acs.chemmater.8b03454 ↗
65. Area-selective deposition: Fundamentals, applications, and future outlook10.1021/acs.chemmater.0c00722 ↗
66. Herlach · 2006 · 31
67. 2007
68. Molecular beam epitaxy of ultra-high-quality AlGaAs/GaAs heterostructures: Enabling physics in low-dimensional electronic systems10.1146/annurev-conmatphys-031113-133905 ↗
69. Morphology of epitaxial growth of GaAs by a molecular beam method: The observation of surface structures10.1063/1.1659315 ↗
70. Molecular beam epitaxy10.1088/0034-4885/48/12/002 ↗
71. How molecular beam epitaxy (MBE) began and its projection into the future10.1016/s0022-0248(98)01265-2 ↗
72. The role of MBE in recent quantum Hall effect physics discoveries10.1016/j.physe.2003.09.035 ↗
73. Upward mobility rocks!10.1038/nmat2888 ↗
74. Photoluminescence and the gallium problem for highest-mobility GaAs/AlGaAs-based 2d electron gases10.1016/j.jcrysgro.2016.02.039 ↗
75. Surface segregation and the Al problem in GaAs quantum wells10.1103/physrevmaterials.2.034006 ↗
76. Ultra-high-quality two-dimensional electron systems10.1038/s41563-021-00942-3 ↗
77. Observation of the fractional quantum Hall effect in an oxide10.1038/nmat2874 ↗
78. Even-denominator fractional quantum Hall physics in ZnO10.1038/nphys3259 ↗
79. Enhanced ordering temperatures in antiferromagnetic manganite superlattices10.1038/nmat2557 ↗
80. Epitaxial SrTiO3 films with electron mobilities exceeding 30,000 cm2 V−1 s−110.1038/nmat2750 ↗
81. Quantum many-body interactions in digital oxide superlattices10.1038/nmat3405 ↗
82. Orbital engineering in symmetry-breaking polar heterostructures10.1103/physrevlett.114.026801 ↗
83. LaAlO3 stoichiometry is key to electron liquid formation at LaAlO3/SrTiO3 interfaces10.1038/ncomms3351 ↗
84. Strong orbital polarization in a cobaltate–titanate oxide heterostructure10.1103/physrevlett.123.117201 ↗
85. High-temperature superconductivity in a single copper-oxygen plane10.1126/science.1178863 ↗
86. Dependence of the critical temperature in overdoped copper oxides on superfluid density10.1038/nature19061 ↗
87. Design and differentiation of quantum states at subnanometer scale in La2CuO4−Sr2CuO4−δ superlattices10.1021/acsnano.3c01422 ↗
88. Oxide interfaces—An opportunity for electronics10.1126/science.1181862 ↗
89. Interface physics in complex oxide heterostructures10.1146/annurev-conmatphys-062910-140445 ↗
90. Emergent phenomena at oxide interfaces10.1038/nmat3223 ↗
91. Two-dimensional epitaxial superconductor-semiconductor heterostructures: A platform for topological superconducting networks10.1103/physrevb.93.155402 ↗
92. An all-epitaxial nitride heterostructure with concurrent quantum Hall effect and superconductivity10.1126/sciadv.abf1388 ↗
93. InSbAs two-dimensional electron gases as a platform for topological superconductivity10.1021/acs.nanolett.1c03520 ↗
94. Spiral growth without dislocations: Molecular beam epitaxy of the topological insulator Bi2Se3 on epitaxial graphene/SiC(0001)10.1103/physrevlett.108.115501 ↗
95. Interfacial mode coupling as the origin of the enhancement of Tc in FeSe films on SrTiO310.1038/nature13894 ↗
96. Heusler compounds and spintronics10.1016/j.pcrysgrow.2016.04.020 ↗
97. A simple electron counting model for half-Heusler surfaces10.1126/sciadv.aar5832 ↗
98. Epitaxy, exfoliation, and strain-induced magnetism in rippled Heusler membranes10.1038/s41467-021-22784-y ↗
99. 1989