Growth of ultra-flat ultra-thin alkali antimonide photocathode films
Source abstract
Abstract
Ultra-flat, ultra-thin alkali antimonide photocathodes with high crystallinity can exhibit high quantum efficiency and low mean transverse energy of outgoing electrons, which are essential requirements for a variety of applications for photocathode materials. Here, we investigate the growth of Cs3Sb on graphene-coated 4H–SiC (Gr/4H–SiC), 3C–SiC, and Si3N4 substrates. Sb is deposited using pulsed laser deposition, while Cs is deposited thermally and simultaneously. We demonstrate, employing x-ray analysis and quantum efficiency measurements, that this growth method yields atomically smooth Cs3Sb photocathodes with a high quantum efficiency (>10%), even in the ultra-thin limit (<30 nm). For the Si3N4 substrate, film growth is shown to be polycrystalline, while films grown on Gr/4H–SiC show a high degree of ordering with signs of epitaxy.
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Research context
OpenAlex topics: Ga2O3 and related materials · Semiconductor materials and devices · Advanced Electron Microscopy Techniques and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Leiden Institute of Physics 1 , Niels Bohrweg 2, Leiden, The Netherlands
Brookhaven National Laboratory 2 , Upton, New York 11973-5000, USA
Cornell University Laboratory for Accelerator-Based Sciences and Education 3 , Ithaca, New York 14853, USA
IBM T. J. Watson Research Center 4 , Yorktown Heights, New.York 10598, USA
University of Vienna, Faculty of Physics, VCQ 5 , A-1090 Vienna, Austria
University of Vienna, Max Perutz Laboratories, Department of Structural and Computational Biology 6 , A-1030 Vienna, Austria
Arizona State University 7 , Tempe, Arizona 85287, USA
SLAC National Accelerator Laboratory 8 , Menlo Park, California 94025, USA
Funding
H2020 Future and Emerging Technologies · U.S. Department of Energy
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