Significantly reinforced thermoelectric performance in the novel 1T-Au6Se2 monolayer

Ultra-low lattice thermal conductivity has long been a requirement for the high thermoelectric properties of materials. In this work, the novel 1T-Au6Se2 monolayer was obtained by introducing Au6 clusters into the selenide monolayer, and its electrical and thermal transport characteristics are investigated using first-principles computations supplemented with semi-classical Boltzmann transport theory. The calculation shows that the 1T-Au6Se2 monolayer exhibits ultra-low lattice thermal conductivity and excellent thermoelectric properties owing to its low phonon frequency, group velocity, and extremely strong anharmonicity. Based on strain engineering from 0% to 2%, the lattice thermal conductivity further reduces by restricting the thermal transport on the premise of maintaining outstanding electrical transport properties in the p-type doped system. Thence, the value of ZT for the p-type system increases nearly by 70% compared with the non-stressed state at 700 K. Our investigation indicates the ultra-low thermal conductivity and high ZT of the 1T-Au6Se2 monolayer that might be prepared in the lab, providing new insights into enhancing the thermoelectric performance of the material in the future.