Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy
Source abstract
Abstract
Using low-temperature cathodoluminescence spectroscopy, we study the properties of N- and Al-polar AlN layers grown by molecular beam epitaxy on bulk AlN{0001}. Compared with the bulk AlN substrate, layers of both polarities feature a suppression of deep-level luminescence, a total absence of the prevalent donor with an exciton binding energy of 28 meV, and a much increased intensity of the emission from free excitons. The dominant donor in these layers is characterized by an associated exciton binding energy of 13 meV. The observation of excited exciton states up to the exciton continuum allows us to directly extract the Γ5 free exciton binding energy of 57 meV.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Acoustic Wave Resonator Technologies · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Applied and Engineering Physics, Cornell University 1 , Ithaca, New York 14853, USA
Department of Electrical and Computer Engineering, Cornell University 2 , Ithaca, New York 14853, USA
Department of Materials Science and Engineering, Cornell University 3 , Ithaca, New York 14853, USA
Research Laboratory of Electronics, Massachusetts Institute of Technology 4 , Cambridge, Massachusetts 02139, USA
Kavli Institute at Cornell for Nanoscale Science, Cornell University 5 , Ithaca, New York 14853, USA
Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V. 6 , 10117 Berlin, Germany
Funding
National Science Foundation · Air Force Office of Scientific Research
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