Hardware implementation of RRAM based binarized neural networks
Source abstract
Abstract
Resistive switching random access memory (RRAM) has been explored to accelerate the computation of neural networks. RRAM with linear conductance modulation is usually required for the efficient weight updating during the online training according to the back-propagation algorithm. However, most RRAM devices usually show the nonlinear characteristic. Here, to overcome the dilemma, we designed a novel weight updating principle for binarized neural networks, which enables the nonlinear RRAM to realize the weight updating in efficiency during online training. Moreover, a vector-matrix multiplication is designed to parallel calculate the dot-products of the forward and backward propagation. 1 kb nonlinear RRAM array is fabricated to demonstrate the feasibility of the analog accumulation and the parallel vector-matrix multiplication. The results achieved in this work offer new solutions for future energy efficient neural networks.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Machine Learning and ELM
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institute of Microelectronics, Peking University , No. 5 Yiheyuan Road Haidian District, Beijing 100871, People’s Republic of China
Funding
National Natural Science Foundation of China · Foundation for Innovative Research Groups of the National Natural Science Foundation of China
References (40)
Show source-provided references
1. Proc. IEEE · 1998 · 86 · 227810.1109/5.726791 ↗
2. IEEE Trans. Signal Process. · 1997 · 45 · 267310.1109/78.650093 ↗
3. 2012 · 1097
4. 2016 · 770
5. 2016 · 550
6. Nature · 2016 · 529 · 48410.1038/nature16961 ↗
7. IEEE Internet Things J. · 2016 · 3 · 63710.1109/jiot.2016.2579198 ↗
8. Computer · 2017 · 50 · 3010.1109/mc.2017.9 ↗
9. 2014 · 609
10. 2017 · 1
11. IEEE J. Solid-State Circuits · 2017 · 52 · 12710.1109/jssc.2016.2616357 ↗
12. Adv. Phys. · 2017 · 2 · 8910.1080/23746149.2016.1259585 ↗
13. Front. Neurosci. · 2016 · 10 · 33310.3389/fnins.2016.00333 ↗
14. IEEE Trans. Electron Devices · 2015 · 62 · 349810.1109/ted.2015.2439635 ↗
15. Sci. Rep. · 2015 · 5 · 1015010.1038/srep10150 ↗
16. 2011 · 52
17. Front. Neurosci. · 2016 · 10 · 5610.3389/fnins.2016.00056 ↗
18. IEEE Trans. Electron Devices · 2012 · 59 · 220610.1109/ted.2012.2197951 ↗
19. 2017 · 139
20. 2017 · 176
21. 2017 · 151
22. IEEE Trans. Electron Devices · 2018 · 65 · 177410.1109/ted.2018.2817266 ↗
23. Nanoscale · 2016 · 8 · 1562910.1039/c6nr02029a ↗
24. 2010 · 436
25. 2014 · 1
26. 2012 · 497
27. 2015 · 451
28. Nanotechnology · 2016 · 27 · 36520410.1088/0957-4484/27/36/365204 ↗
29. 2018 · 103
30. IEEE Trans. Electron Devices · 2016 · 63 · 506410.1109/ted.2016.2615648 ↗
31. IEEE Electron Device Lett. · 2015 · 36 · 115710.1109/led.2015.2481819 ↗
32. M. Courbariaux, I. Hubara, D. Soudry, E. Y. Ran, and B. Yoshua, preprint arXiv:1604.03058 (2016).
33. 2016 · 77
34. 2018 · 488
35. Nat. Commun. · 2017 · 8 · 1519910.1038/ncomms15199 ↗
36. 2010 · 249
37. S. Ioffe and C. Szegedy, preprint arXiv:1502.03167 (2015).
38. D. P. Kingma and J. Ba, preprint arXiv:1412.6980 (2014).
39. IEEE Trans. Electron Devices · 2017 · 64 · 61410.1109/ted.2016.2643162 ↗
40. 2017 · 135