journal article·2021-06-01Open access

Pure single-photon emission from an InGaN/GaN quantum dot

M. J. Holmes, T. Zhu, F. C.-P. Massabuau, J. Jarman, R. A. Oliver, Y. Arakawa

APL Materials· Volume 9· Issue 6

Abstract

Single-photon emitters with high degrees of purity are required for photonic-based quantum technologies. InGaN/GaN quantum dots are promising candidates for the development of single-photon emitters but have typically exhibited emission with insufficient purity. Here, pulsed single-photon emission with high purity is measured from an InGaN quantum dot. A raw g(2)(0) value of 0.043 ± 0.009 with no corrections whatsoever is achieved under quasi-resonant pulsed excitation. Such a low value is, in principle, sufficient for use in quantum key distribution systems.
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Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor Quantum Structures and Devices · Diamond and Carbon-based Materials Research

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute of Industrial Science, The University of Tokyo 1 , 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan

Institute for Nano Quantum Information Electronics, The University of Tokyo 2 , 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan

Department of Materials Science and Metallurgy, The University of Cambridge 3 , 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom

Department of Physics, SUPA, University of Strathclyde 4 , Glasgow G4 0NG, United Kingdom

Funding

Japan Society for the Promotion of Science · Ministry of Education, Culture, Sports, Science and Technology · Engineering and Physical Sciences Research Council

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