Variable temperature probing of minority carrier transport and optical properties in p-Ga2O3
Source abstract
Abstract
Electron beam-induced current in the temperature range from 304 to 404 K was employed to measure the minority carrier diffusion length in metal–organic chemical vapor deposition-grown p-Ga2O3 thin films with two different concentrations of majority carriers. The diffusion length of electrons exhibited a decrease with increasing temperature. In addition, the cathodoluminescence emission spectrum identified optical signatures of the acceptor levels associated with the VGa−–VO++ complex. The activation energies for the diffusion length decrease and quenching of cathodoluminescence emission with increasing temperature were ascribed to the thermal de-trapping of electrons from VGa−–VO++ defect complexes.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Physics, University of Central Florida 1 , Orlando, Florida 32816, USA
Groupe d’Etude de la Matière Condensée, Université Paris-Saclay, Université de Versailles Saint Quentin en Yvelines–CNRS 2 , 45 Av. des Etats-Unis, 78035 Versailles Cedex, France
Department of Chemical Engineering, University of Florida 3 , Gainesville, Florida 32611, USA
Material Science and Engineering, University of Florida 4 , Gainesville, Florida 32611, USA
School of Electrical Engineering, Tel Aviv University 5 , Tel Aviv 69978, Israel
Center for Engineering Physics, Skolkovo Institute Science and Technology 6 , Nobel St., Bldg. 1, Moscow 121205, Russia
Funding
Division of Electrical, Communications and Cyber Systems · United States-Israel Binational Science Foundation · North Atlantic Treaty Organization · Defense Threat Reduction Agency · Division of Materials Research · Institut de Physique
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