Control of spin orientation in antiferromagnetic NiO by epitaxial strain and spin–flop coupling
Source abstract
Abstract
A ferromagnet/antiferromagnet (FM/AFM) Fe/NiO bilayer was grown using molecular beam epitaxy on MgO(001) and Cr buffered MgO(001) substrates. X-ray linear dichroism measurements showed a dominating out-of-plane component for the NiO spins in Fe/NiO/MgO and an in-plane spin direction for NiO layers grown on the Cr buffer. Furthermore, systematic studies on the magnetic properties of Fe/NiO grown on the wedge-shaped Cr buffer revealed a continuous strain-induced spin reorientation transition from out-of-plane to in-plane NiO spin directions when the Cr thickness increased from 0 nm to 3.5 nm. The analysis of the in-plane magnetic structure of NiO in Fe/NiO/Cr showed a pronounced uniaxial anisotropy in thin AFM layers. The AFM spins are perpendicular to the Fe spins due to spin–flop interaction. These results demonstrate the feasibility of using strain and coupling with FMs to manipulate spin structures in NiO.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: ZnO doping and properties · Magnetic properties of thin films · Multiferroics and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Faculty of Physics and Applied Computer Science, AGH University of Science and Technology 1 , al. Mickiewicza 30, 30-059 Kraków, Poland
National Synchrotron Radiation Centre SOLARIS, Jagiellonian University 2 , Kraków, Poland
Funding
Foundation for Polish Science
References (31)
Show source-provided references
1. Rev. Mod. Phys. · 2018 · 90 · 01500510.1103/revmodphys.90.015005 ↗
2. Nanotechnology · 2018 · 29 · 11200110.1088/1361-6528/aaa812 ↗
3. Sci. Adv. · 2018 · 4 · eaar356610.1126/sciadv.aar3566 ↗
4. Phys. Rev. B · 2014 · 90 · 054400310.1103/physrevb.90.054403 ↗
5. Phys. Rev. B · 2007 · 75 · 214412210.1103/physrevb.75.214412 ↗
6. Phys. Rev. Lett. · 2005 · 95 · 04720110.1103/physrevlett.95.047201 ↗
7. Sci. Rep. · 2019 · 9 · 88910.1038/s41598-018-37110-8 ↗
8. Phys. Rev. Lett. · 2010 · 104 · 21720410.1103/physrevlett.104.217204 ↗
9. Phys. Rev. Lett. · 2007 · 99 · 14720110.1103/physrevlett.99.147201 ↗
10. Phys. Rev. B · 2010 · 81 · 21240910.1103/physrevb.81.212409 ↗
11. Appl. Phys. Lett. · 2019 · 114 · 14240310.1063/1.5093701 ↗
12. ACS Appl. Mater. Interfaces · 2019 · 11 · 825810.1021/acsami.8b21421 ↗
13. Nat. Nanotechnol. · 2019 · 14 · 13110.1038/s41565-018-0339-0 ↗
14. Phys. Rev. B · 2010 · 81 · 18443210.1103/physrevb.81.184432 ↗
15. Phys. Lett. A · 2018 · 382 · 86510.1016/j.physleta.2018.01.008 ↗
16. Nat. Photonics · 2011 · 5 · 3110.1038/nphoton.2010.259 ↗
17. Phys. Rev. Lett. · 2019 · 123 · 17720110.1103/physrevlett.123.177201 ↗
18. Phys. Rev. Lett. · 2013 · 110 · 20660110.1103/physrevlett.110.206601 ↗
19. Appl. Phys. Lett. · 2017 · 111 · 05240910.1063/1.4997588 ↗
20. Phys. Rev. Lett. · 2017 · 118 · 14720210.1103/physrevlett.118.147202 ↗
21. Phys. Rev. B · 2018 · 97 · 01441710.1103/physrevb.97.014417 ↗
22. Sci. Rep. · 2018 · 8 · 1416710.1038/s41598-018-32508-w ↗
23. Phys. Rev. Lett. · 2003 · 91 · 13720110.1103/physrevlett.91.137201 ↗
24. Phys. Rev. B · 1998 · 58 · 520110.1103/physrevb.58.5201 ↗
25. Phys. Rev. B · 1998 · 57 · 1162310.1103/physrevb.57.11623 ↗
26. Phys. Rev. B · 2003 · 68 · 05442010.1103/physrevb.68.054420 ↗
27. Phys. Rev. B · 2010 · 81 · 17441610.1103/physrevb.81.174416 ↗
28. Phys. Rev. B · 2004 · 69 · 020408(R)10.1103/physrevb.69.020408 ↗
29. Phys. Rev. Lett. · 2007 · 98 · 19720110.1103/physrevlett.98.197201 ↗
30. Phys. Rev. B · 2008 · 78 · 06442710.1103/physrevb.78.064427 ↗
31. Phys. Rev. Lett. · 1998 · 81 · 451610.1103/physrevlett.81.4516 ↗