Revealing antiferromagnetic transition of van der Waals MnPS3 via vertical tunneling electrical resistance measurement
Source abstract
Abstract
Understanding the correlation between the electronic and magnetic properties of materials is a crucial step to functionalize or modulate their properties. However, it is not straightforward to electrically characterize magnetic insulators, especially large-bandgap materials, due to their high resistivity. Here, we successfully performed electrical measurements of a two-dimensional (2D) antiferromagnetic insulator, van der Waals-layered MnPS3, by accounting for the vertical graphene/MnPS3/graphene heterostructure. Antiferromagnetic transition is observed by the variance in electrical resistance from the paramagnetic to antiferromagnetic transition near ∼78 K in the vertically stacked heterostructure devices, which is consistent with the magnetic moment measurement. This opens an opportunity for modulating the magnetic transition of 2D van der Waals materials via an electrical gate or surface functionalization.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Graphene research and applications · 2D Materials and Applications · MXene and MAX Phase Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS) 1 , Suwon 16419, South Korea
Department of Energy Science, Sungkyunkwan University (SKKU) 2 , Suwon 16419, South Korea
Department of Electronic and Electrical Engineering, Sungkyunkwan University 3 , Suwon 16419, South Korea
Department of Physics, Sungkyunkwan University 4 , Suwon 16419, South Korea
Funding
Ministry of Education · Korea Institute of Science and Technology Information · Institute for Basic Science
References (55)
Show source-provided references
1. Absence of ferromagnetism or antiferromagnetism in one- or two-dimensional isotropic Heisenberg models10.1103/physrevlett.17.1133 ↗
2. Discovery of intrinsic ferromagnetism in two-dimensional van der Waals crystals10.1038/nature22060 ↗
3. Ferromagnetic insulator Cr2Ge2Te6 thin films with perpendicular remanence10.1063/1.5046166 ↗
4. Atomic scale electronic structure of the ferromagnetic semiconductor Cr2Ge2Te610.1016/j.scib.2018.05.034 ↗
5. Coupling of crystal structure and magnetism in the layered, ferromagnetic insulator CrI310.1021/cm504242t ↗
6. On the origin of magnetic anisotropy in two dimensional CrI310.1088/2053-1583/aa75ed ↗
7. Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit10.1038/nature22391 ↗
8. Controlling magnetism in 2D CrI3 by electrostatic doping10.1038/s41565-018-0135-x ↗
9. Probing magnetism in 2D van der Waals crystalline insulators via electron tunneling10.1126/science.aar3617 ↗
10. Spin direction-controlled electronic band structure in two-dimensional ferromagnetic CrI310.1021/acs.nanolett.8b01125 ↗
11. Electric-field switching of two-dimensional van der Waals magnets10.1038/s41563-018-0040-6 ↗
12. Patterning-induced ferromagnetism of Fe3GeTe2 van der Waals materials beyond room temperature10.1021/acs.nanolett.8b02806 ↗
13. Two-dimensional itinerant ferromagnetism in atomically thin Fe3GeTe210.1038/s41563-018-0149-7 ↗
14. Gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe210.1038/s41586-018-0626-9 ↗
15. Magnetic correlations in the quasi-two-dimensional semiconducting ferromagnet CrSiTe310.1103/physrevb.92.144404 ↗
16. Ultrathin nanosheets of CrSiTe3: A semiconducting two-dimensional ferromagnetic material10.1039/c5tc03463a ↗
17. The direct observation of ferromagnetic domain of single crystal CrSiTe310.1063/1.5024576 ↗
18. Strong room-temperature ferromagnetism in VSe2 monolayers on van der Waals substrates10.1038/s41565-018-0063-9 ↗
19. Van der Waals metallic transition metal dichalcogenides10.1021/acs.chemrev.7b00618 ↗
20. S. J. Yun et al., “Room-temperature ferromagnetism in monolayer WSe2 semiconductor via vanadium dopant,” e-print arXiv:1806.06479 (2018), pp. 1–10.
21. Van der Waals engineering of ferromagnetic semiconductor heterostructures for spin and valleytronics10.1126/sciadv.1603113 ↗
22. Valley manipulation by optically tuning the magnetic proximity effect in WSe2/CrI3 heterostructures10.1021/acs.nanolett.8b01105 ↗
23. Giant tunneling magnetoresistance in spin-filter van der Waals heterostructures10.1126/science.aar4851 ↗
24. One million percent tunnel magnetoresistance in a magnetic van der Waals heterostructure10.1021/acs.nanolett.8b01552 ↗
25. Two-dimensional magnetic crystals and emergent heterostructure devices10.1126/science.aav4450 ↗
26. Magnetic 2D materials and heterostructures10.1038/s41565-019-0438-6 ↗
27. Intrinsic van der Waals magnetic materials from bulk to the 2D limit: New Frontiers of spintronics10.1002/adma.201900065 ↗
28. Two-dimensional magnets: Forgotten history and recent progress towards spintronic applications10.1002/adfm.201901414 ↗
29. Review on structural and chemical properties of transition metal phosphorous trisulfides MPS310.1016/0167-2738(86)90055-x ↗
30. Metal thio- and selenophosphates as multifunctional van der Waals layered materials10.1002/adma.201602852 ↗
31. Magnetism in two-dimensional van der Waals materials10.1038/s41586-018-0631-z ↗
32. New frontiers on van der Waals layered metal phosphorous trichalcogenides10.1002/adfm.201802151 ↗
33. Antiferromagnetic spintronics10.1103/revmodphys.90.015005 ↗
34. Giant magnetic response of a two-dimensional antiferromagnet10.1038/s41567-018-0152-6 ↗
35. Raman fingerprint of two terahertz spin wave branches in a two-dimensional honeycomb Ising ferromagnet10.1038/s41467-018-07547-6 ↗
36. Electrically induced 2D half-metallic antiferromagnets and spin field effect transistors10.1073/pnas.1715465115 ↗
37. Magnetism in the layered transition-metal thiophosphates MPS3 (M = Mn, Fe, and Ni)10.1103/physrevb.46.5425 ↗
38. Weak van der Waals stacking, wide-range band gap, and Raman study on ultrathin layers of metal phosphorus trichalcogenides10.1021/acsnano.5b05927 ↗
39. Physical properties and lithium intercalates of CrPS410.1016/0038-1098(78)90328-9 ↗
40. Spin dynamics, electronic, and thermal transport properties of two-dimensional CrPS4 single crystal10.1063/1.4940948 ↗
41. Ising-type magnetic ordering in atomically thin FePS310.1021/acs.nanolett.6b03052 ↗
42. Pressure-induced electronic and structural phase evolution in the van der Waals compound FePS310.1103/physrevlett.121.266801 ↗
43. Emergent superconductivity in an iron-based honeycomb lattice initiated by pressure-driven spin-crossover10.1038/s41467-018-04326-1 ↗
44. Magnetic structure of the quasi-two-dimensional antiferromagnet NiPS310.1103/physrevb.92.224408 ↗
45. Raman scattering in antiferromagnetic FePS3 and FePSe3 crystals10.1103/physrevb.35.7097 ↗
46. Raman spectroscopy of atomically thin two-dimensional magnetic iron phosphorus trisulfide (FePS3) crystals10.1088/2053-1583/3/3/031009 ↗
47. Tunneling transport of mono- and few-layers magnetic van der Waals MnPS310.1063/1.4961211 ↗
48. Isolation and characterization of few-layer manganese thiophosphite10.1021/acsnano.7b05856 ↗
49. Lattice dynamics of layered MPX3 (M = Mn, Fe, Ni, Zn; X = S, Se) compounds10.1103/physrevb.38.12089 ↗
50. Probing the magnetic ordering of anti-ferromagnetic MnPS3 by Raman spectroscopy10.1021/acs.jpclett.9b00758 ↗
51. Fine structures in the X-ray photoemission spectra of MnO, FeO, CoO, and NiO single crystals10.1016/s0368-2048(98)00294-1 ↗
52. Boron nitride substrates for high-quality graphene electronics10.1038/nnano.2010.172 ↗
53. Neutron diffraction study on MnPS3 and FePS310.1143/jpsj.52.3919 ↗
54. Antiferromagnetic resonance studies in molecular magnetic materials10.1016/j.jpcs.2003.11.007 ↗
55. Canted antiferromagnetism and spin reorientation transition in layered inorganic-organic perovskite (C6H5CH2CH2NH3)2MnCl410.1039/c1dt11544h ↗