Research Update: Inhomogeneous aluminium dopant distribution in magnetron sputtered ZnO:Al thin films and its influence on their electrical properties
Source abstract
Abstract
The spatial distribution of Al in magnetron sputtered ZnO:Al films has been investigated in depth. Two different kinds of inhomogeneities were observed: an enrichment in the bulk of the film and an enrichment at the interface to the substrate. This has been correlated to the electrical properties of the films: the former inhomogeneities can lead to trap states at the grain boundaries limiting the free carrier mobility. The latter can promote the formation of secondary phases, which leads to an electrical inactivation of the dopant. Furthermore, this effect can contribute to the thickness dependence of the electrical properties of ZnO:Al films.
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Research context
OpenAlex topics: ZnO doping and properties · Metal and Thin Film Mechanics · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institute for Solar Fuels 1 Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, , Hahn-Meitner-Platz 1, D-14109 Berlin, Germany
Indira Gandhi Centre for Atomic Research 2 Physical Metallurgy Division, Metallurgy and Materials Group, , Kalpakkam 603 102, India
Institute of Applied Material Research 3 Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, , Hahn-Meitner-Platz 1, D-14109 Berlin, Germany
Universität Stuttgart 4 Institut für Materialwissenschaft, , Heisenbergstraße 3, D-70569 Stuttgart, Germany
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