Anisotropic strain relaxation through prismatic and basal slip in α-(Al, Ga)2O3 on R-plane Al2O3
Source abstract
Abstract
Pseudomorphic and partially relaxed layers of corundum phase (Al, Ga)2O3 epilayers on (01.2)-oriented Al2O3 fabricated by pulsed laser deposition (PLD) are investigated. An exact analytical (continuum elasticity) strain theory for rhombohedral heterostructures as a function of the two substrate orientation angles fits the strain state of pseudomorphic and relaxed samples very well. From reciprocal space maps and a quantitative analysis of x-ray diffraction peaks and tilts using the strain theory, it is concluded that in the present samples grown below 800 °C, plastic strain relaxation above the critical thickness occurs first through slip on the prismatic a-plane glide system and subsequently via the basal c-plane system. We also present a general PLD stoichiometry transfer model simultaneously explaining the epilayer alloy composition and growth rate in the entire composition range.
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Research context
OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · GaN-based semiconductor devices and materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Felix-Bloch-Institut für Festkörperphysik, Fakultät für Physik und Geowissenschaften, Universität Leipzig , Linnéstr. 5, 04103 Leipzig, Germany
Funding
Deutsche Forschungsgemeinschaft · European Social Fund
References (51)
Show source-provided references
1. Strain-induced polarization in wurtzite III-nitride semipolar layers10.1063/1.2218385 ↗
2. Pseudomorphic ZnO-based heterostructures: From polar through all semipolar to nonpolar orientations10.1002/pssb.201552535 ↗
3. Elastic theory of pseudomorphic monoclinic and rhombohedral heterostructures10.1063/1.5045845 ↗
4. Atomically stepped, pseudomorphic, corundum-phase (Al1−xGax)2O3 thin films (0 ≤ x < 0.08) grown on R-plane sapphire10.1063/1.5059374 ↗
5. Strain in pseudomorphic monoclinic Ga2O3-based heterostructures10.1002/pssb.201700134 ↗
6. Heteroepitaxy of corundum-structured α-Ga2O3 thin Films on α-Al2O3 Substrates by ultrasonic mist chemical vapor deposition10.1143/jjap.47.7311 ↗
7. A power device material of corundum-structured α-Ga2O3 fabricated by MIST EPITAXY® technique10.7567/jjap.57.02cb18 ↗
8. Band gap and band offset of Ga2O3 and (AlxGa1?x)2O3 alloys10.1103/physrevapplied.10.011003 ↗
9. Characterization of band offset in α-(AlxGa1?x)2O3/α-Ga2O3 heterostructures
10. Epitaxial growth of ZnO thin films on R-plane sapphire substrate by radio frequency magnetron sputtering10.1116/1.580437 ↗
11. Structural characterization of nonpolar (112¯0) a-plane GaN thin films grown on (11¯02) r-plane sapphire10.1063/1.1493220 ↗
12. Substrates for gallium nitride epitaxy10.1016/s0927-796x(02)00008-6 ↗
13. Epitaxial growth of α-Ga2O3 thin films on a-, m-, and r-plane sapphire substrates by mist chemical vapor deposition using α-Fe2O3 buffer layers10.1016/j.matlet.2017.06.003 ↗
14. Evolution of corundum-structured III-oxide semiconductors: Growth, properties, and devices10.7567/jjap.55.1202a3 ↗
15. Epitaxial Nd-doped α-(Al1−xGax)2O3 films on sapphire for solid-state waveguide lasers10.1364/ol.35.003793 ↗
16. Dependence of material removal on crystal orientation of sapphire under cross scratching10.1016/j.jeurceramsoc.2017.01.032 ↗
17. How to distinguish between opposite faces of an a-plane sapphire wafer10.1107/s1600576718001383 ↗
18. Investigation of the cutting mechanisms and the anisotropic ductility of monocrystalline sapphire10.1016/j.cirp.2017.04.018 ↗
19. 1966
20. 2012
21. Investigation of the anisotropy of the structural properties of GaN(0001) layers grown by MOVPE on a-plane (112¯0) sapphire10.1134/s106378261811026x ↗
22. Quasiparticle bands and spectra of Ga2O3 polymorphs10.1103/physrevb.93.115204 ↗
23. 2019
24. Bandgap engineering of α-(AlxGa1−x)2O3 by a mist chemical vapor deposition two-chamber system and verification of Vegard’s Law10.1063/1.5037678 ↗
25. 2009
26. Bond Lengths in the α-Ga2O3 Structure and the high-pressure Phase of Ga2−xFexO310.1063/1.1840945 ↗
27. X-ray elastic constants for α-Al2O310.1063/1.2189071 ↗
28. 2019
29. 2019
30. The competing oxide and sub-oxide formation in metal-oxide molecular beam epitaxy10.1063/1.4913447 ↗
31. Influence of oxygen pressure on growth of Si-doped (AlxGa1−x)2O3 thin films on c-sapphire substrates by pulsed laser deposition10.1149/2.0411907jss ↗
32. A review of the segmented-target approach to combinatorial material synthesis by pulsed-laser deposition
33. Continuous composition spread using pulsed-laser deposition with a single, segmented target10.1039/c3ce41327f ↗
34. Combinatorial material science and strain engineering enabled by pulsed laser deposition using radially segmented targets10.1021/acscombsci.8b00100 ↗
35. P. H. Richter, “Estimating errors in least-squares fitting,” TDA Progress Report No. 42-122, 1–137, Jet Propulsion Laboratory, Pasadena, 1995.
36. Phase formation and strain relaxation of Ga2O3 on c-plane and a-plane sapphire substrates as studied by synchrotron-based x-ray diffraction10.1063/1.4998804 ↗
37. Slip Systems in Al2O310.1111/j.1151-2916.1973.tb15432.x ↗
38. Deformation of Al2O3 single crystals between 25°C and 1800°C: Basal and prismatic slip10.1051/jphyscol:1981304 ↗
39. Prismatic slip of Al2O3 single crystals below 1000°C in compression under hydrostatic pressure10.1111/j.1151-2916.1981.tb10314.x ↗
40. Critical thickness for the formation of misfit dislocations originating from prismatic slip in semipolar and nonpolar III-nitride heterostructures10.1063/1.4939907 ↗
41. Evidence of lattice tilt and slip in m-plane InGaN/GaN heterostructure10.1063/1.3644978 ↗
42. Thermal expansion of AlN, sapphire, and silicon10.1063/1.1663432 ↗
43. Thermal expansion of alpha Ga2O310.1111/j.1151-2916.1973.tb12471.x ↗
44. Temperature-dependent elastic stiffness constants of α- and θ-Al2O3 from first-principles calculations10.1088/0953-8984/22/37/375403 ↗
45. High-power low-droop violet semipolar (303¯ 1¯) InGaN/GaN light-emitting diodes with thick active layer design10.1063/1.4900793 ↗
46. Perfect dislocations in the wurtzite lattice10.1002/pssb.19680300103 ↗
47. Trace analysis of non-basal plane misfit stress relaxation in (202¯1) and (303¯ 1¯) semipolar InGaN/GaN heterostructures10.1063/1.4716465 ↗
48. Observation of non-basal slip in semipolar InxGa1−xN/GaN heterostructures10.1063/1.3671113 ↗
49. Onset of plastic relaxation in semipolar (112¯2) InxGa1−xN/GaN heterostructures10.1016/j.jcrysgro.2013.10.027 ↗
50. Defect blocking via laterally induced growth of semipolar (101¯1) GaN on patterned substrates10.1088/0022-3727/49/47/475104 ↗
51. N. Le Biavan, “Vers un laser à cascade quantique à base d’oxyde de zinc,” Ph.D. thesis, Université Côte d’Azur (2019).