journal article·2016-10Open access

Preservation of pristine Bi2Te3 thin film topological insulator surface after ex situ mechanical removal of Te capping layer

C. I. Fornari, P. H. O. Rappl, S. L. Morelhão, T. R. F. Peixoto, H. Bentmann, F. Reinert, E. Abramof

APL Materials· Volume 4· Issue 10

Abstract

Ex situ analyses on topological insulator films require protection against surface contamination during air exposure. This work reports on a technique that combines deposition of protective capping just after epitaxial growth and its mechanical removal inside ultra-high vacuum systems. This method was applied to Bi2Te3 films with thickness varying from 8 to 170 nm. Contrarily to other methods, this technique does not require any sputtering or thermal annealing setups installed inside the analyzing system and preserves both film thickness and surface characteristics. These results suggest that the technique presented here can be expanded to other topological insulator materials.
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Research context

OpenAlex topics: Topological Materials and Phenomena · Photorefractive and Nonlinear Optics · Graphene research and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Instituto Nacional de Pesquisas Espaciais, CP 515, 12245-970 São José dos Campos, SP, Brazil

Instituto de Física, Universidade de São Paulo, CP 66318, 05315-970 São Paulo, SP, Brazil

Experimentelle Physik VII, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany

Funding

Deutsche Forschungsgemeinschaft (DFG) · Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) · Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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