journal article·2021-10-01Open access

Control of spin–charge conversion in van der Waals heterostructures

Regina Galceran, Bo Tian, Junzhu Li, Frédéric Bonell, Matthieu Jamet, Céline Vergnaud, Alain Marty, Jose H. García, Juan F. Sierra, Marius V. Costache, Stephan Roche, Sergio O. Valenzuela, Aurélien Manchon, Xixiang Zhang, Udo Schwingenschlögl

APL Materials· Volume 9· Issue 10

Abstract

The interconversion between spin and charge degrees of freedom offers incredible potential for spintronic devices, opening routes for spin injection, detection, and manipulation alternative to the use of ferromagnets. The understanding and control of such interconversion mechanisms, which rely on spin–orbit coupling, is therefore an exciting prospect. The emergence of van der Waals materials possessing large spin–orbit coupling (such as transition metal dichalcogenides or topological insulators) and/or recently discovered van der Waals layered ferromagnets further extends the possibility of spin-to-charge interconversion to ultrathin spintronic devices. Additionally, they offer abundant room for progress in discovering and analyzing novel spin–charge interconversion phenomena. Modifying the properties of van der Waals materials through proximity effects is an added degree of tunability also under exploration. This Perspective discusses the recent advances toward spin-to-charge interconversion in van der Waals materials. It highlights scientific developments which include techniques for large-scale growth, device physics, and theoretical aspects.
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Research context

OpenAlex topics: 2D Materials and Applications · Graphene research and applications · Topological Materials and Phenomena

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST 1 , Campus UAB, Bellaterra, 08193 Barcelona, Spain

King Abdullah University of Science and Technology (KAUST), Physical Science and Engineering (PSE) 2 , Thuwal 23955-6900, Saudi Arabia

University of Grenoble Alpes, CNRS, CEA, Spintec 3 , 38000 Grenoble, France

ICREA–Institució Catalana de Recerca i Estudis Avançats 4 , 08010 Barcelona, Spain

Aix-Marseille Université, CNRS, CINaM 5 , Marseille, France

References (100+)

Show source-provided references
1. Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems10.1039/c4nr01600a ↗
2. The 2017 magnetism roadmap10.1088/1361-6463/aa81a1 ↗
3. Recent advances in two-dimensional materials beyond graphene10.1021/acsnano.5b05556 ↗
4. Van der Waals layered materials: Opportunities and challenges10.1021/acsnano.7b07436 ↗
5. Electronics based on two-dimensional materials10.1038/nnano.2014.207 ↗
6. Spin and pseudospins in layered transition metal dichalcogenides10.1038/nphys2942 ↗
7. Spintronics and pseudospintronics in graphene and topological insulators10.1038/nmat3305 ↗
8. Spintronics: Fundamentals and applications10.1103/revmodphys.76.323 ↗
10. Graphene spintronics10.1038/nnano.2014.214 ↗
11. Graphene spintronics: The European Flagship perspective10.1088/2053-1583/2/3/030202 ↗
12. Electronic spin transport and spin precession in single graphene layers at room temperature10.1038/nature06037 ↗
13. Highly efficient spin transport in epitaxial graphene on SiC10.1038/nphys2331 ↗
14. Long distance spin communication in chemical vapour deposited graphene10.1038/ncomms7766 ↗
15. Spin-orbit coupling in curved graphene, fullerenes, nanotubes, and nanotube caps10.1103/physrevb.74.155426 ↗
16. Anisotropic spin relaxation in graphene10.1103/PhysRevLett.101.046601 ↗
17. Controlling spin relaxation in hexagonal BN-encapsulated graphene with a transverse electric field10.1103/PhysRevLett.113.086602 ↗
18. Pseudospin-driven spin relaxation mechanism in graphene10.1038/nphys3083 ↗
19. Spin lifetimes exceeding 12 ns in graphene nonlocal spin valve devices10.1021/acs.nanolett.6b00497 ↗
20. Long spin diffusion length in few-layer graphene flakes10.1103/physrevlett.117.147201 ↗
21. Giant spin lifetime anisotropy in graphene induced by proximity effects10.1103/physrevlett.119.206601 ↗
22. Long-lived nanosecond spin relaxation and spin coherence of electrons in monolayer MoS2 and WS210.1038/nphys3419 ↗
23. Gate-controlled spin-valley locking of resident carriers in WSe2 monolayers10.1103/physrevlett.119.137401 ↗
24. High-performance molybdenum disulfide field-effect transistors with spin tunnel contacts10.1021/nn404961e ↗
25. A two-dimensional spin field-effect switch10.1038/ncomms13372 ↗
26. Electrical gate control of spin current in van der Waals heterostructures at room temperature10.1038/ncomms16093 ↗
27. Graphite and graphene as perfect spin filters10.1103/physrevlett.99.176602 ↗
28. Valley filter and valley valve in graphene10.1038/nphys547 ↗
29. Sub-nanometer atomic layer deposition for spintronics in magnetic tunnel junctions based on graphene spin-filtering membranes10.1021/nn5017549 ↗
30. Exploring the microscopic origin of magnetic anisotropies with x-ray magnetic circular dichroism (XMCD) spectroscopy10.1016/s0304-8853(99)00407-2 ↗
31. Spin-orbital Gilbert damping in common magnetic metals10.1103/physrevb.76.134416 ↗
32. Semiconductor spintronics10.2478/v10155-010-0086-8 ↗
33. Spin Hall effect10.1103/revmodphys.87.1213 ↗
34. Spin Hall effects in metals10.1109/tmag.2013.2262947 ↗
35. Piezo-magnetoelectric effects in p-doped semiconductors10.1103/physrevb.72.033203 ↗
36. Theory of nonequilibrium intrinsic spin torque in a single nanomagnet10.1103/physrevb.78.212405 ↗
37. Spin-torque ferromagnetic resonance induced by the spin Hall effect10.1103/PhysRevLett.106.036601 ↗
38. Current induced torques and interfacial spin-orbit coupling: Semiclassical modeling10.1103/physrevb.87.174411 ↗
39. Spin-orbit torques in action10.1038/nnano.2014.8 ↗
40. Spin-orbitronics at transition metal interfaces10.1016/bs.ssp.2017.07.001 ↗
41. Current induced spin-orbit torques in ferromagnetic and antiferromagnetic systems10.1103/revmodphys.91.035004 ↗
42. Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection10.1038/nature10309 ↗
43. Spin-torque switching with the giant spin Hall effect of tantalum10.1126/science.1218197 ↗
44. Ultrafast magnetization switching by spin-orbit torques10.1063/1.4902443 ↗
45. Experimental demonstration of efficient spin–orbit torque switching of an MTJ with sub-100 ns pulses10.1109/tmag.2017.2707402 ↗
46. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides10.1038/nnano.2012.193 ↗
47. Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides10.1021/nn500064s ↗
48. 2D transition metal dichalcogenides10.1038/natrevmats.2017.33 ↗
49. Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors10.1103/physrevb.84.153402 ↗
50. Van der Waals heterostructures10.1038/nature12385 ↗
51. 2D materials and van der Waals heterostructures10.1126/science.aac9439 ↗
52. Proximity effects in bilayer graphene on monolayer WSe2: Field-effect spin valley locking, spin-orbit valve, and spin transistor10.1103/physrevlett.119.146401 ↗
53. Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor10.1038/nmat4061 ↗
54. Electrically switchable chiral light-emitting transistor10.1126/science.1251329 ↗
55. Control of valley polarization in monolayer MoS2 by optical helicity10.1038/nnano.2012.96 ↗
56. Valley polarization in MoS2 monolayers by optical pumping10.1038/nnano.2012.95 ↗
57. Electrical tuning of valley magnetic moment through symmetry control in bilayer MoS210.1038/nphys2524 ↗
58. Valley-dependent spin polarization in bulk MoS2 with broken inversion symmetry10.1038/nnano.2014.148 ↗
59. The valley Hall effect in MoS2 transistors10.1126/science.1250140 ↗
60. Generation and electric control of spin-valley-coupled circular photogalvanic current in WSe210.1038/nnano.2014.183 ↗
61. Experimental observation of topological Fermi arcs in type-II Weyl semimetal MoTe210.1038/nphys3871 ↗
62. Spectroscopic evidence for a type II Weyl semimetallic state in MoTe210.1038/nmat4685 ↗
63. Fermi arcs and their topological character in the candidate type-II Weyl semimetal MoTe210.1103/physrevx.6.031021 ↗
64. Evidence for two-dimensional Ising superconductivity in gated MoS210.1126/science.aab2277 ↗
65. Ising pairing in superconducting NbSe2 atomic layers10.1038/nphys3538 ↗
66. Strong room-temperature ferromagnetism in VSe2 monolayers on van der Waals substrates10.1038/s41565-018-0063-9 ↗
67. Three-dimensional topological insulators10.1146/annurev-conmatphys-062910-140432 ↗
68. 2015
69. Spin-transfer torque generated by a topological insulator10.1038/nature13534 ↗
70. Topological surface states originated spin–orbit torques in Bi2Se310.1103/physrevlett.114.257202 ↗
71. Room-temperature spin–orbit torque switching induced by a topological insulator10.1103/PhysRevLett.119.077702 ↗
72. Room temperature magnetization switching in topological insulator-ferromagnet heterostructures by spin-orbit torques10.1038/s41467-017-01583-4 ↗
73. Room temperature giant spin–orbit torque due to quantum confinement in sputtered BixSe(1−x) films10.1038/s41563-018-0136-z ↗
74. Strong Rashba–Edelstein effect-induced spin-orbit torques in monolayer transition metal dichalcogenide/ferromagnet bilayers10.1021/acs.nanolett.6b03300 ↗
75. C. Cheng , M.Collet, J.-C.Rojas Sánchez, V.Ivanovskaya, B.Dlubak, P.Seneor, A.Fert, H.Kim, G. H.Han, Y. H.Lee, H.Yang, and A.Anane, “Spin to charge conversion in MoS2 monolayer with spin pumping,” arXiv:1510.03451 (2016).
76. Universal mechanical exfoliation of large-area 2D crystals10.1038/s41467-020-16266-w ↗
77. Large-area synthesis of high-quality and uniform graphene films on copper foils10.1126/science.1171245 ↗
78. Recent progress in CVD growth of 2D transition metal dichalcogenides and related heterostructures10.1002/adma.201901694 ↗
79. Ultrafast growth of single-crystal graphene assisted by a continuous oxygen supply10.1038/nnano.2016.132 ↗
80. Toward mass production of CVD graphene films10.1002/adma.201800996 ↗
81. Evolution of cellulose acetate to monolayer graphene10.1016/j.carbon.2020.11.084 ↗
82. Direct chemical vapor deposition of graphene on dielectric surfaces10.1021/nl9037714 ↗
83. Atomic-concentration diffusion governing integrated-territory graphene syntheses at catalyst–insulator interfaces10.1016/j.carbon.2016.02.073 ↗
84. Chemical vapor deposition of graphene on thin-metal films10.1016/j.xcrp.2021.100372 ↗
85. Graphene doping: A review10.5640/insc.010280 ↗
86. Chemical doping of graphene10.1039/c0jm02922j ↗
87. Graphene-based fluorescence-quenching-related Fermi level elevation and electron-concentration surge10.1021/acs.nanolett.6b02430 ↗
88. Toward clean and crackless transfer of graphene10.1021/nn203377t ↗
89. Graphene transfer: Key for applications10.1039/c2nr31317k ↗
90. Paraffin-enabled graphene transfer10.1038/s41467-019-08813-x ↗
91. Graphene single crystals: Size and morphology engineering10.1002/adma.201405887 ↗
92. Fractal-theory-based control of the shape and quality of CVD-grown 2D materials10.1002/adma.201902431 ↗
93. Primary nucleation-dominated chemical vapor deposition growth for uniform graphene monolayers on dielectric substrate10.1021/jacs.9b05705 ↗
94. Correlated insulator behaviour at half-filling in magic-angle graphene superlattices10.1038/nature26154 ↗
95. Unconventional superconductivity in magic-angle graphene superlattices10.1038/nature26160 ↗
96. Tunable correlated states and spin-polarized phases in twisted bilayer-bilayer graphene10.1038/s41586-020-2260-6 ↗
97. Adlayer-free large-area single crystal graphene grown on a Cu(111) foil10.1002/adma.201903615 ↗
98. Colossal grain growth yields single-crystal metal foils by contact-free annealing10.1126/science.aao3373 ↗
99. BN white graphene with ‘colorful’ edges: The energies and morphology10.1021/nl2011142 ↗
100. Growth of bilayer graphene on insulating substrates10.1021/nn202829y ↗