journal article·2014-11Open access

A high density two-dimensional electron gas in an oxide heterostructure on Si (001)

E. N. Jin, L. Kornblum, D. P. Kumah, K. Zou, C. C. Broadbridge, J. H. Ngai, C. H. Ahn, F. J. Walker

APL Materials· Volume 2· Issue 11

Abstract

We present the growth and characterization of layered heterostructures comprised of LaTiO3 and SrTiO3 epitaxially grown on Si (001). Magnetotransport measurements show that the sheet carrier densities of the heterostructures scale with the number of LaTiO3/SrTiO3 interfaces, consistent with the presence of an interfacial 2-dimensional electron gas (2DEG) at each interface. Sheet carrier densities of 8.9 × 1014 cm−2 per interface are observed. Integration of such high density oxide 2DEGs on silicon provides a bridge between the exceptional properties and functionalities of oxide 2DEGs and microelectronic technologies.
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Research context

OpenAlex topics: Electronic and Structural Properties of Oxides · Semiconductor materials and devices · Magnetic and transport properties of perovskites and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Center for Research on Interface Structures and Phenomena and Department of Applied Physics, Yale University, New Haven, Connecticut 06511, USA

Department of Physics, Southern Connecticut State University, 501 Crescent Street, New Haven, Connecticut 06515, USA

Department of Physics, The University of Texas at Arlington, Arlington, Texas 76019, USA

Department of Mechanical Engineering and Materials Science, Yale University, New Haven, Connecticut 06511, USA

Funding

National Science Foundation (NSF) · Office of Naval Research (ONR)

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