Analysis of the temperature dependence of the thermal conductivity of insulating single crystal oxides
Source abstract
Abstract
The temperature dependence of the thermal conductivity of 27 different single crystal oxides is reported from ≈20 K to 350 K. These crystals have been selected among the most common substrates for growing epitaxial thin-film oxides, spanning over a range of lattice parameters from ≈3.7 Å to ≈12.5 Å. Different contributions to the phonon relaxation time are discussed on the basis of the Debye model. This work provides a database for the selection of appropriate substrates for thin-film growth according to their desired thermal properties, for applications in which heat management is important.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Electronic and Structural Properties of Oxides · Ferroelectric and Piezoelectric Materials · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Centro de Investigación en Química Biolóxica e Materiais Moleculares (CIQUS) and Departamento de Química-Física, Universidade de Santiago de Compostela, 15782 Santiago de Compostela, Spain
Departamento de Física Aplicada, Universidade de Santiago de Compostela, 15782 Santiago de Compostela, Spain
Funding
European Research Council (ERC) · Ministerio de Economía y Competitividad (MINECO)
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