Structural and electronic properties of NbN/GaN junctions grown by molecular beam epitaxy
Source abstract
Abstract
We report the structural and electronic properties of NbN/GaN junctions grown by plasma-assisted molecular beam epitaxy. High crystal-quality NbN films grown on GaN exhibit superconducting critical temperatures in excess of 10 K for thicknesses as low as 3 nm. We observe that the NbN lattice adopts the stacking sequence of the underlying GaN and that domain boundaries in the NbN thereby occur at the site of atomic steps in the GaN surface. The electronic properties of the NbN/GaN junction are characterized using Schottky barrier diodes. Current–voltage–temperature and capacitance–voltage measurements are used to determine the Schottky barrier height of the NbN/GaN junction, which we conclude is ∼1.3 eV.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Silicon Carbide Semiconductor Technologies · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science and Engineering, Cornell University 1 , Ithaca, New York 14853, USA
Research Laboratory of Electronics, Massachusetts Institute of Technology 2 , Cambridge, Massachusetts 02139, USA
Department of Applied and Engineering Physics, Cornell University 3 , Ithaca, New York 14853, USA
School of Electrical and Computer Engineering, Cornell University 4 , Ithaca, New York 14853, USA .
Funding
Office of Naval Research
References (36)
Show source-provided references
1. Enhanced coherence of all-nitride superconducting qubits epitaxially grown on silicon substrate10.1038/s43246-021-00204-4 ↗
2. Superconducting qubits consisting of epitaxially grown NbN/AlN/NbN Josephson junctions10.1063/1.3663539 ↗
3. All-epitaxial bulk acoustic wave resonators10.1002/pssa.201900786 ↗
4. Epitaxial bulk acoustic wave resonators as highly coherent multi-phonon sources for quantum acoustodynamics10.1038/s41467-020-15472-w ↗
5. Development of epitaxial AlxSc1−xN for artificially structured metal/semiconductor superlattice metamaterials10.1002/pssb.201451314 ↗
6. TiN/(Al,Sc)N metal/dielectric superlattices and multilayers as hyperbolic metamaterials in the visible spectral range10.1103/physrevb.90.125420 ↗
7. Epitaxial superlattices with titanium nitride as a plasmonic component for optical hyperbolic metamaterials10.1073/pnas.1319446111 ↗
8. An all-epitaxial nitride heterostructure with concurrent quantum Hall effect and superconductivity10.1126/sciadv.abf1388 ↗
9. GaN/NbN epitaxial semiconductor/superconductor heterostructures10.1038/nature25768 ↗
10. High-quality NbN nanofilms on a GaN/AlN heterostructure10.1063/1.4898327 ↗
11. Negative differential resistance in AlAs/NiAl/AlAs heterostructures: Evidence for size quantization in metals10.1063/1.100198 ↗
12. Molecular beam epitaxial growth of ultrathin buried metal layers: (Al,Ga)As/NiAl/(Al,Ga)As heterostructures10.1063/1.99804 ↗
13. Rocksalt nitride metal/semiconductor superlattices: A new class of artificially structured materials10.1063/1.5011972 ↗
14. Unexplored MBE growth mode reveals new properties of superconducting NbN10.1103/physrevmaterials.5.024802 ↗
15. Epitaxial metallic β-Nb2N films grown by MBE on hexagonal SiC substrates10.7567/apex.8.085501 ↗
16. Autonomous growth of NbN nanostructures on atomically flat AlN surfaces10.1063/5.0031604 ↗
17. Coherent epitaxial growth of superconducting NbN ultrathin films on AlN by sputtering10.35848/1882-0786/ab916e ↗
18. Molecular beam epitaxial growth of scandium nitride on hexagonal SiC, GaN, and AlN10.1063/1.5121329 ↗
19. Step-free GaN surfaces grown by confined-area metal-organic vapor phase epitaxy10.1063/1.4993840 ↗
20. 2005 · 1
21. 2001 · 194
22. Effect of threading dislocation density on Ni/n-GaN Schottky diode I-V characteristics10.1063/1.2219985 ↗
23. Temperature dependence of characteristic parameters of the H-terminated Sn/p-Si(1 0 0) Schottky contacts10.1016/S0169-4332(03)00564-6 ↗
24. Barrier inhomogeneities at Schottky contacts10.1063/1.347243 ↗
25. Barrier inhomogeneities at Schottky contacts: Curved Richardson plots, idealities, and flat band barriers10.1557/proc-260-311 ↗
26. Transport properties of inhomogeneous Schottky contacts10.1088/0031-8949/1991/t39/039 ↗
27. Optical and transport properties of ultrathin NbN films and nanostructures10.1103/physrevb.80.054510 ↗
28. Epitaxial growth of sputtered ultra-thin NbN layers and junctions on sapphire10.1109/tasc.2009.2019243 ↗
29. Work function measurement of transition metal nitride and carbide thin films10.1016/j.vacuum.2005.11.030 ↗
30. Electronic properties of ideal and interface-modified metal-semiconductor interfaces10.1116/1.588947 ↗
31. Cohesion in alloys—Fundamentals of a semi-empirical model10.1016/0378-4363(80)90054-6 ↗
32. Determination of energy-band offsets between GaN and AlN using excitonic luminescence transition in AlGaN alloys10.1063/1.2158492 ↗
33. Electrical characteristics of GaN/6H-SiC n-p heterojunctions10.1016/s0921-5107(96)01977-0 ↗
34. Conduction band offset at the InN/GaN heterojunction10.1063/1.2821378 ↗
35. GaN evaporation in molecular-beam epitaxy environment10.1063/1.123691 ↗
36. Optical properties of niobium nitride plasmonic nanoantennas for the near- and mid-infrared spectral range10.1364/ome.403093 ↗