journal article·2023-11-01Open access

Growth of β-Ga2O3 and ϵ/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy

Sushma Raghuvansy, Jon P. McCandless, Marco Schowalter, Alexander Karg, Manuel Alonso-Orts, Martin S. Williams, Christian Tessarek, Stephan Figge, Kazuki Nomoto, Huili Grace Xing, Darrell G. Schlom, Andreas Rosenauer, Debdeep Jena, Martin Eickhoff, Patrick Vogt

APL Materials· Volume 11· Issue 11

Abstract

The heteroepitaxial growth and phase formation of Ga2O3 on Al-polar AlN(0001) templates by molecular-beam epitaxy (MBE) are studied. Three different MBE approaches are employed: (i) conventional MBE, (ii) suboxide MBE (S-MBE), and (iii) metal-oxide-catalyzed epitaxy (MOCATAXY). We grow phase-pure β-Ga2O3(2̄01) and phase-pure ϵ/κ-Ga2O3(001) with smooth surfaces by S-MBE and MOCATAXY. Thin film analysis shows that the crystallographic and surface features of the β-Ga2O3(2̄01)/AlN(0001) and ϵ/κ-Ga2O3(001)/AlN(0001) epilayers are of high crystalline quality. Growth and phase diagrams are developed to synthesize Ga2O3 on AlN by MBE and MOCATAXY and to provide guidance to grow Ga2O3 on several non-oxide surfaces, e.g., AlN, GaN, and SiC, by MBE, S-MBE, and MOCATAXY.
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Research context

OpenAlex topics: Ga2O3 and related materials · GaN-based semiconductor devices and materials · ZnO doping and properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute of Solid-State Physics, University of Bremen 1 , Otto-Hahn-Allee 1, 28359 Bremen, Germany

School of Electrical and Computer Engineering, Cornell University 2 , Ithaca, New York 14853, USA

MAPEX Center for Materials and Processes, University of Bremen 3 , 28359 Bremen, Germany

Department of Material Science and Engineering, Cornell University 4 , Ithaca, New York 14853, USA

Kavli Institute at Cornell for Nanoscale Science, Cornell University 5 , Ithaca, New York 14853, USA

Leibniz-Institut für Kristallzüchtung 6 , Max-Born-Str. 2, 12489 Berlin, Germany

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