journal article·2020-04-01Open access

Strain-tunable III-nitride/ZnO heterostructures for photocatalytic water-splitting: A hybrid functional calculation

Zhaofu Zhang, Bingquan Huang, Qingkai Qian, Zhibin Gao, Xi Tang, Baikui Li

APL Materials· Volume 8· Issue 4

Abstract

Solar to fuel energy conversion is one of the momentous topics nowadays considering the urgent demand for clean energy supplies. In this work, the tunable electronic and optical properties of III-nitride/ZnO 2D/2D heterostructures (including GaN/ZnO, AlN/ZnO, and GaN/AlN) by strain engineering were investigated by first-principles calculations. The studied heterostructures feature a small interlayer distance, with the cation of one layer directly above the anion of the other layer, and vice versa. This leads to a strong binding energy and interlayer coupling across the heterostructure. The built-in field induced by the charge redistribution facilitates the photoexcited carrier migration, which is beneficial to the photocatalytic water splitting application. The stable III-nitride/ZnO heterostructures exhibit decent band edge positions with biaxial strain engineering and feature an enhancement of optical absorption under tensile strain. Our results indicate that the III-nitride/ZnO 2D/2D heterostructures are promising photocatalysts for solar to hydrogen generation by water splitting.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · 2D Materials and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Engineering, University of Cambridge 1 , Cambridge CB2 1PZ, United Kingdom

College of Physics and Optoelectronic Engineering, Shenzhen University 2 , Shenzhen 518060, China

Department of Electrical Engineering, The Pennsylvania State University 3 , University Park, Pennsylvania 16802, USA

Department of Physics, National University of Singapore 4 , Singapore 117551, Republic of Singapore

Funding

Shenzhen Science and Technology Innovation Commission · Shenzhen University Scientific Research Start-up Foundation · National Natural Science Foundation of China

References (58)

Show source-provided references
1. Chem. Rev. · 2010 · 110 · 644610.1021/cr1002326 ↗
2. Chem. Soc. Rev. · 2017 · 46 · 464510.1039/c6cs00306k ↗
3. Chem. Rev. · 2010 · 110 · 650310.1021/cr1001645 ↗
4. Chem. Soc. Rev. · 2014 · 43 · 752010.1039/c3cs60378d ↗
5. Chem. Soc. Rev. · 2009 · 38 · 25310.1039/b800489g ↗
6. Catal. Today · 2012 · 185 · 27010.1016/j.cattod.2011.07.008 ↗
7. ACS Appl. Mater. Interfaces · 2018 · 10 · 01741910.1021/acsami.8b01286 ↗
8. Appl. Mater. Today · 2018 · 13 · 27610.1016/j.apmt.2018.09.013 ↗
9. IEEE Electron Device Lett. · 2018 · 39 · 28410.1109/led.2017.2787788 ↗
10. J. Mater. Chem. C · 2018 · 6 · 494310.1039/c8tc00558c ↗
11. J. Appl. Phys. · 2005 · 98 · 04130110.1063/1.1992666 ↗
12. IEEE Trans. Electron Devices · 2017 · 64 · 77910.1109/ted.2017.2657579 ↗
13. Adv. Electron. Mater · 2018 · 4 · 160050110.1002/aelm.201600501 ↗
14. IEEE Electron Device Lett. · 2018 · 39 · 114510.1109/led.2018.2847669 ↗
15. Chin. Phys. B · 2014 · 23 · 01680110.1088/1674-1056/23/1/016801 ↗
16. Nanomaterials · 2019 · 9 · 167410.3390/nano9121674 ↗
17. Appl. Phys. Rev. · 2018 · 5 · 01110510.1063/1.4990377 ↗
18. Acta Phys. Sin. · 2019 · 68 · 24630110.7498/aps.68.20191258 ↗
19. Phys. Rev. Lett. · 2007 · 99 · 02610210.1103/physrevlett.99.026102 ↗
20. Nat. Mater. · 2016 · 15 · 116610.1038/nmat4742 ↗
21. Adv. Mater. · 2019 · 31 · 180344810.1002/adma.201803448 ↗
22. Phys. Rev. B · 2013 · 87 · 16541510.1103/physrevb.87.165415 ↗
23. J. Phys. Chem. C · 2014 · 118 · 01759410.1021/jp5038014 ↗
24. J. Mater. Chem. A · 2014 · 2 · 01538910.1039/c4ta03134b ↗
25. J. Mater. Chem. C · 2017 · 5 · 941210.1039/c7tc02461d ↗
26. Phys. Chem. Chem. Phys. · 2017 · 19 · 01732410.1039/c7cp01852e ↗
27. IEEE Electron Device Lett. · 2017 · 38 · 14510.1109/led.2016.2633487 ↗
28. J. Phys. Chem. C · 2017 · 121 · 364810.1021/acs.jpcc.6b12613 ↗
29. J. Phys. Chem. C · 2017 · 121 · 660510.1021/acs.jpcc.6b11270 ↗
30. Sci. Rep. · 2018 · 8 · 01200910.1038/s41598-018-30614-3 ↗
31. J. Mater. Chem. C · 2019 · 7 · 479110.1039/c9tc00423h ↗
32. J. Appl. Phys. · 2019 · 126 · 06570110.1063/1.5099125 ↗
33. ACS Omega · 2019 · 4 · 02168910.1021/acsomega.9b02143 ↗
34. Appl. Surf. Sci. · 2019 · 466 · 13310.1016/j.apsusc.2018.10.027 ↗
35. Adv. Sci. · 2019 · 6 · 180170210.1002/advs.201801702 ↗
36. Appl. Surf. Sci. · 2018 · 427 · 55410.1016/j.apsusc.2017.08.043 ↗
37. Chem. Phys. · 2020 · 528 · 11053910.1016/j.chemphys.2019.110539 ↗
38. Phys. Status Solidi B · 2019 · 257 · 190066310.1002/pssb.201900663 ↗
39. RSC Adv. · 2019 · 9 · 03623410.1039/c9ra06104e ↗
40. Phys. Rev. B · 1996 · 54 · 1116910.1103/physrevb.54.11169 ↗
41. Phys. Rev. B · 1994 · 50 · 1795310.1103/physrevb.50.17953 ↗
42. J. Chem. Phys. · 2010 · 132 · 15410410.1063/1.3382344 ↗
43. ACS Appl. Mater. Interfaces · 2015 · 7 · 514110.1021/am507287f ↗
44. V. Wang, N. Xu, J. C. Liu, G. Tang, and W. Geng, arXiv:1908.08269 (2019).
45. Phys. Rev. Lett. · 1996 · 77 · 386510.1103/physrevlett.77.3865 ↗
46. J. Chem. Phys. · 2005 · 123 · 17410110.1063/1.2085170 ↗
47. J. Chem. Phys. · 2006 · 124 · 21990610.1063/1.2204597 ↗
48. Tunable properties of novel Ga2O3 monolayer for electronics and optoelectronics applications: A first-principles study
49. Phys. Rev. Lett. · 2012 · 108 · 23550210.1103/physrevlett.108.235502 ↗
50. Chem. Soc. Rev. · 2014 · 43 · 439510.1039/c3cs60438a ↗
51. Appl. Surf. Sci. · 2020 · 505 · 14465010.1016/j.apsusc.2019.144650 ↗
52. Comput. Mater. Sci. · 2006 · 36 · 35410.1016/j.commatsci.2005.04.010 ↗
53. ACS Nano · 2019 · 13 · 510310.1021/acsnano.8b08190 ↗
54. Phys. Rev. Lett. · 1980 · 44 · 162010.1103/physrevlett.44.1620 ↗
55. Appl. Phys. Lett. · 2019 · 114 · 16160110.1063/1.5097567 ↗
56. Nat. Mater. · 2014 · 13 · 109110.1038/nmat4061 ↗
57. Nanoscale · 2019 · 11 · 1355210.1039/c9nr02862e ↗
58. Nano Lett. · 2018 · 18 · 564010.1021/acs.nanolett.8b02143 ↗