Effect of dimethylaluminumhydride-derived aluminum oxynitride passivation layer on the interface chemistry and band alignment of HfTiO-InGaAs gate stacks
Source abstract
Abstract
In this letter, the reduction and removal of surface native oxide from as-received InGaAs surface by using dimethylaluminumhydride-derived aluminum oxynitride (AlON) passivation layer prior to HfTiO deposition is proposed to solve Fermi level pinning issue. It has been revealed that complete consumption of native oxides of AsOx and GaOx at the InGaAs surface, but no effect to InOx, has been realized after metalorganic chemical vapor deposition AlON at 300 °C. X-ray photoelectron spectroscopy observations of HfTiO/InGaAs gate stacks demonstrate that introducing AlON layer can suppress the regrowth of native oxide at the interface. In addition, the dependence of the valence band spectra of HfTiO/InGaAs gate stacks on AlON passivation layer has been discussed in detail.
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Research context
OpenAlex topics: Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design · Integrated Circuits and Semiconductor Failure Analysis
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Affiliations
Anhui University 1 School of Physics and Materials Science, , Hefei 230039, People's Republic of China
Chinese Academy of Sciences 2 National Laboratory for Infrared Physics, , Shanghai Institute of Technical Physics, 500 Yutian Road, Shanghai 200083, People's Republic of China
Hefei Normal University 3 Department of Physics and Electronic Engineering, , Hefei 230061, People's Republic of China
Funding
NNSFC
References (34)
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34. See supplementary material at http://dx.doi.org/10.1063/1.4808243 for the current paper reports the reduction and removal of surface native oxide from as-received InGaAs surface by using dimethylaluminumhydride-derived aluminum oxynitride (AlON) passivation layer prior to HfTiO deposition to solve Fermi level pinning issue. It has been found that complete consumption of native oxides of AsOx and GaOx at the InGaAs surface, but no effect to InOx, has been realized after MOCVD AlON at 300 °C. XPS observations of HfTiO/InGaAs gate stacks demonstrate that introducing AlON layer can suppress the regrowth of native oxide at the interface.