The thermal stability of epitaxial GeSn layers
Source abstract
Abstract
We report on the direct observation of lattice relaxation and Sn segregation of GeSn/Ge/Si heterostructures under annealing. We investigated strained and partially relaxed epi-layers with Sn content in the 5 at. %-12 at. % range. In relaxed samples, we observe a further strain relaxation followed by a sudden Sn segregation, resulting in the separation of a β-Sn phase. In pseudomorphic samples, a slower segregation process progressively leads to the accumulation of Sn at the surface only. The different behaviors are explained by the role of dislocations in the Sn diffusion process. The positive impact of annealing on optical emission is also discussed.
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Research context
OpenAlex topics: Photonic and Optical Devices · Advanced Photonic Communication Systems · Photonic Crystals and Applications
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Affiliations
IHP 1 , 15236 Frankfurt (Oder), Germany
Peter Grünberg Institute 9 (PGI-9) and JARA-Fundamentals of Future Information Technologies (JARA-FIT), Forschungszentrum Jülich 2 , 52425 Jülich, Germany
Dipartimento di Fisica “E. Fermi,” Università di Pisa 3 , Largo Pontecorvo 3, I-56127 Pisa, Italy
Dipartimento di Scienze, Università Roma Tre 4 , Viale G. Marconi 446, I-00146 Rome, Italy
Funding
Deutsche Forschungsgemeinschaft · Bundesministerium für Bildung und Forschung
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