Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
Source abstract
Abstract
We demonstrate the epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy. We prepared patterned SiO2 masks on a (0001) α-Ga2O3/sapphire template, and then α-Ga2O3 islands were regrown selectively on the mask windows. The islands grew vertically and laterally to coalesce with each other. Facet control of the α-Ga2O3 islands was achieved by controlling the growth temperature, and inclined facets developed by decreasing the temperature. Transmission electron microscopy revealed that the crystal quality of the regrown α-Ga2O3 was improved owing to both the blocking of dislocations by the mask and the dislocation bending by the inclined facets.
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Research context
OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Advanced Photocatalysis Techniques
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Affiliations
Optical Single Crystals Group, National Institute for Materials Science 1 , 1-1 Namiki, 305-0044 Tsukuba, Japan
FLOSFIA, Inc. 2 , Kyodai-Katsura Venture Plaza, 615-8245 Kyoto, Japan
Department of Electrical and Electronic Engineering, Saga University 3 , 1 Honjo-machi, 840-8502 Saga, Japan
Department of Electronic Science and Engineering, Kyoto University 4 , Katsura 615-8520, Kyoto, Japan
Funding
New Energy and Industrial Technology Development Organization
References (10)
Show source-provided references
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