Machine-learning-assisted thin-film growth: Bayesian optimization in molecular beam epitaxy of SrRuO3 thin films
Source abstract
Abstract
Materials informatics exploiting machine learning techniques, e.g., Bayesian optimization (BO), have the potential to reduce the number of thin-film growth runs for optimization of thin-film growth conditions through incremental updates of machine learning models in accordance with newly measured data. Here, we demonstrated BO-based molecular beam epitaxy (MBE) of SrRuO3, one of the most intensively studied materials in the research field of oxide electronics, mainly owing to its unique nature as a ferromagnetic metal. To simplify the intricate search space of entangled growth conditions, we ran the BO for a single condition while keeping the other conditions fixed. As a result, high-crystalline-quality SrRuO3 film exhibiting a high residual resistivity ratio of over 50 as well as strong perpendicular magnetic anisotropy was developed in only 24 MBE growth runs in which the Ru flux rate, growth temperature, and O3-nozzle-to-substrate distance were optimized. Our BO-based search method provides an efficient experimental design that is not as dependent on the experience and skills of individual researchers, and it reduces experimental time and cost, which will accelerate materials research.
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Research context
OpenAlex topics: Advanced Condensed Matter Physics · Magnetic and transport properties of perovskites and related materials · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
NTT Basic Research Laboratories, NTT Corporation 1 , Atsugi, Kanagawa 243-0198, Japan
NTT Communication Science Laboratories, NTT Corporation 2 , Soraku-gun, Kyoto 619-0237, Japan
References (55)
Show source-provided references
1. J. Am. Chem. Soc. · 1958 · 81 · 262910.1021/ja01520a007 ↗
2. J. Appl. Phys. · 1968 · 39 · 132710.1063/1.1656282 ↗
3. Mater. Res. Bull. · 1972 · 7 · 87310.1016/0025-5408(72)90075-x ↗
4. J. Phys.: Condens. Matter · 1996 · 8 · 1011110.1088/0953-8984/8/48/026 ↗
5. Science · 1992 · 258 · 176610.1126/science.258.5089.1766 ↗
6. Appl. Phys. Lett. · 1993 · 62 · 243410.1063/1.109388 ↗
7. J. Phys. Soc. Jpn. · 1997 · 66 · 389310.1143/jpsj.66.3893 ↗
8. Rev. Mod. Phys. · 2012 · 84 · 25310.1103/revmodphys.84.253 ↗
9. Phys. Rev. B · 2016 · 94 · 21442010.1103/physrevb.94.214420 ↗
10. APL Mater. · 2018 · 6 · 04610110.1063/1.5023477 ↗
11. Phys. Rev. B · 2007 · 76 · 07512610.1103/physrevb.76.155111 ↗
12. Appl. Phys. Lett. · 2016 · 109 · 16190210.1063/1.4964882 ↗
13. Appl. Phys. Lett. · 1997 · 70 · 196210.1063/1.118792 ↗
14. Mater. Sci. Eng. B · 1998 · 56 · 15210.1016/s0921-5107(98)00227-x ↗
15. Phys. Rev. Lett. · 2013 · 110 · 08700410.1103/physrevlett.110.087004 ↗
16. Phys. Rev. B · 1998 · 58 · R1331810.1103/physrevb.58.r13318 ↗
17. Phys. Rev. X · 2019 · 9 · 01102710.1103/physrevx.9.011027 ↗
18. Phys. Rev. Lett. · 2000 · 85 · 518210.1103/physrevlett.85.5182 ↗
19. Phys. Rev. B · 2003 · 67 · 09441310.1103/physrevb.67.094413 ↗
20. 2015
21. 2016
22. 2015
23. APL Mater. · 2016 · 4 · 05320810.1063/1.4946894 ↗
24. Mater. Today · 2005 · 8 · 3810.1016/s1369-7021(05)71123-8 ↗
25. Phys. Rev. B · 2014 · 89 · 05430310.1103/physrevb.89.054303 ↗
26. Phys. Rev. Lett. · 2015 · 115 · 20590110.1103/physrevlett.115.205901 ↗
27. Phys. Rev. X · 2016 · 6 · 04106110.1103/physrevx.6.041061 ↗
28. Phys. Rev. Mater. · 2018 · 2 · 04380210.1103/physrevmaterials.2.043802 ↗
29. Sci. Adv. · 2018 · 4 · eaar419210.1126/sciadv.aar4192 ↗
30. Phys. Rev. Mater. · 2018 · 2 · 04380310.1103/physrevmaterials.2.043803 ↗
31. Appl. Phys. Express · 2018 · 11 · 06010110.7567/apex.11.060101 ↗
32. npj Comput. Mater. · 2018 · 4 · 2910.1038/s41524-018-0085-8 ↗
33. npj Comput. Mater. · 2018 · 4 · 410.1038/s41524-017-0057-4 ↗
34. Sci. Adv. · 2018 · 4 · eaaq155610.1126/sciadv.aaq1566 ↗
35. Appl. Phys. Express · 2018 · 11 · 11240110.7567/apex.11.112401 ↗
36. Sol. RRL · 2018 · 2 · 180019810.1002/solr.201800198 ↗
37. ACS Appl. Mater. Interfaces · 2019 · 11 · 1154510.1021/acsami.9b02381 ↗
38. 2012
39. Appl. Phys. Lett. · 1995 · 67 · 255710.1063/1.114431 ↗
40. J. Cryst. Growth · 2013 · 378 · 18410.1016/j.jcrysgro.2012.12.057 ↗
41. Nat. Commun. · 2019 · 10 · 53510.1038/s41467-019-08440-6 ↗
42. J. Global Optim. · 1998 · 13 · 45510.1023/a:1008306431147 ↗
43. 1978 · 117
44. Proc. Phys. Soc. · 1945 · 57 · 47710.1088/0959-5309/57/6/303 ↗
45. Phys. Rev. B · 2004 · 70 · 01442310.1103/physrevb.70.014423 ↗
46. Appl. Phys. Lett. · 1995 · 66 · 242710.1063/1.113962 ↗
47. Jpn. J. Appl. Phys., Part 2 · 2004 · 43 · L22710.1143/jjap.43.l227 ↗
48. J. Appl. Phys. · 2008 · 103 · 07A71010.1063/1.2838335 ↗
49. Nat. Mater. · 2010 · 9 · 72110.1038/nmat2804 ↗
50. Phys. Rev. Lett. · 1997 · 79 · 516210.1103/physrevlett.79.5162 ↗
51. Phys. Rev. B · 2017 · 96 · 10441010.1103/physrevb.96.104410 ↗
52. Phys. Rev. Mater. · 2018 · 2 · 10441610.1103/physrevmaterials.2.104416 ↗
53. J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct. · 1988 · 6 · 165710.1116/1.584425 ↗
54. Henini · 2018 · 649
55. Nat. Rev. Mater. · 2018 · 3 · 510.1038/s41578-018-0005-z ↗