Resistive switching characteristics of Pt/Nb:SrTiO ₃ under different oxygen pressures

The resistive switching (RS) effect in Nb:SrTiO ₃ (NSTO) demonstrates significant potential for applications in next-generation data storage, memristor devices and neuromorphic computing. Despite its promise, the underlying mechanism of oxygen vacancy ([Formula: see text]) migration remains controversial. In this study, Pt electrodes were sputtered on NSTO using vacuum ion plating, and in electrodes were mechanically pressed onto NSTO to form the Pt/NSTO/In structure. The RS effect of the Pt/NSTO/In structure is investigated under high-vacuum conditions (10 ⁻⁴ Pa), moderate vacuum conditions (100 Pa, air), air atmosphere (1 atm) and pure oxygen atmosphere (1 atm). The structure demonstrates optimal RS performance under moderate vacuum conditions (100 Pa, air) due to the migration and injection of oxygen ions (O ²⁻ ) under an external electric field. Conversely, RS performance deteriorates under either high-vacuum (10 ⁻⁴ Pa) or pure oxygen (1 atm) environments, attributable to [Formula: see text] depletion and oversaturation, respectively. Remarkably, introducing artificial surface defects via controlled sandpaper treatment enhances the RS effect in high vacuum. These findings provide crucial experimental insights into the [Formula: see text]-mediated RS mechanism in transition metal oxides.