Nanometric polishing of lutetium oxide by plasma-assisted etching
Source abstract
Abstract
Abstract Plasma-assisted etching, in which the irradiation of hydrogen plasma and inorganic acid etching are integrated, is proposed as a novel polishing method for sesquioxide crystals. By means of this approach, low damage and even damage-free surfaces with a high material removal rate can be achieved in lutetium oxide surface finishing. Analysis of transmission electron microscopy and X-ray photoelectron spectroscopy reveal that plasma hydrogenation converts the sesquioxide into hydroxide, which leads a high efficient way to polish the surfaces. The influences of process conditions on the etching boundary and surface roughness are also qualitatively investigated using scanning electron microscope and white light interferometry. The newly developed process is verified by a systematic experiment.
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Research context
OpenAlex topics: Advanced Surface Polishing Techniques · Diamond and Carbon-based Materials Research · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (34)
Show source-provided references
1. Chan VWS (2002) Optical space communications. IEEE J Sel Top Quantum Electron 6:959–97510.1109/2944.902144 ↗
2. Taczak TM, Killinger DK (1998) Development of a tunable, narrow-linewidth, cw 2.066-μm Ho:YLF laser for remote sensing of atmospheric CO2 and H2O. Appl Opt 37:8460–847610.1364/AO.37.008460 ↗
3. Gattass RR, Mazur E (2008) Femtosecond laser micromachining in transparent materials. Nat Photonics 2:219–22510.1038/nphoton.2008.47 ↗
4. Flock ST, Stern T, Lehman P et al (1997) Er:YAG laser-induced changes in skin in vivo and transdermal drug delivery. Proc SPIE Int Soc Opt Eng 2970:374–379
5. Boulnois JL (1986) Photophysical processes in recent medical laser developments: a review. Lasers Med Sci 1:47–6610.1007/BF02030737 ↗
6. Weber MJ (1968) Radiative and multiphonon relaxation of rare-earth ions in Y2O3. Phys Rev 171:283–29110.1103/PhysRev.171.283 ↗
7. Petermann K, Huber G, Fornasiero L et al (2000) Rare-earth-doped sesquioxides. J Lumin 87:973–97510.1016/S0022-2313(99)00497-4 ↗
8. Koopmann P, Lamrini S, Scholle K et al (2011) Multi-watt laser operation and laser parameters of Ho-doped Lu2O3 at 2.12 μm. Opt Mater Express 1:1447–145610.1364/OME.1.001447 ↗
9. Fornasiero L, Mix E, Peters V et al (1999) New oxide crystals for solid state lasers. Cryst Res Technol 34:255–26010.1002/(SICI)1521-4079(199902)34:2<255::AID-CRAT255>3.0.CO;2-U ↗
10. Boulon G (2003) Yb3+ doped oxide crystals for diode-pumped solid state lasers: crystal growth, optical spectroscopy, new criteria of evaluation and combinatorial approach. Opt Mater 22:85–8710.1016/S0925-3467(02)00350-6 ↗
11. Peters V, Bolz A, Petermann K et al (2002) Growth of high-melting sesquioxides by the heat exchanger method. J Cryst Growth 237:879–88310.1016/S0022-0248(01)02054-1 ↗
12. Mun JH, Novoselov A, Yoshikawa A et al (2005) Growth of Yb3+-doped Y2O3 single crystal rods by the micro-pulling-down method. Mater Res Bull 40:1235–124310.1016/j.materresbull.2005.04.040 ↗
13. Fang FZ, Zhang N, Guo D et al (2019) Towards atomic and close-to-atomic scale manufacturing. Int J Extreme Manuf 1:01200110.1088/2631-7990/ab0dfc ↗
14. Fang FZ (2020) Atomic and close-to-atomic scale manufacturing: perspectives and measures. Int J Extreme Manuf 2:03020110.1088/2631-7990/aba495 ↗
15. Li C, Wu Y, Li X et al (2019) Deformation characteristics and surface generation modelling of crack-free grinding of GGG single crystals. J Mater Process Technol 279:11657710.1016/j.jmatprotec.2019.116577 ↗
16. Fang FZ, Xu F (2018) Recent advances in micro/nano-cutting: effect of tool edge and material properties. Nanomanuf Metrol 1:4–3110.1007/s41871-018-0005-z ↗
17. Nagano M, Yamaga F, Zettsu N et al (2011) Development of fabrication process for aspherical neutron focusing mirror using numerically controlled local wet etching with low-pressure polishing. Nucl Instrum Methods Phys Res 634:112–11610.1016/j.nima.2010.06.253 ↗
18. Namba Y, Tsuwa H (1977) Ultrafine finishing of sapphire single crystal. CIRP Ann 26:325–329
19. Mori Y, Yamauchi K, Endo K (1987) Elastic emission machining. Precis Eng 9:123–12810.1016/0141-6359(87)90029-8 ↗
20. Gormley J, Manfra M, Calawa A (1991) Hydroplane polishing of semiconductor crystals. Rev Sci Instrum 52:1256–125910.1063/1.1136763 ↗
21. Li ZJ, Qin Z, Zhou ZH et al (2009) SnO2 nanowire arrays and electrical properties synthesized by fast heating a mixture of SnO2 and CNTs waste soot. Nanoscale Res Lett 4:1434–143810.1007/s11671-009-9416-5 ↗
22. Kordonski VW, Golini D, Dumas P et al (1998) Magnetorheological-suspension-based finishing technology. Proc SPIE-Int Soc Opt Eng 3326:527–535
23. Yang X, Yang XZ, Sun RY et al (2019) Obtaining atomically smooth 4H-SiC (0001) surface by controlling balance between anodizing and polishing in electrochemical mechanical polishing. Nanomanuf Metrol 2:140–14710.1007/s41871-019-00043-5 ↗
24. Arnold T, Böhm G, Fechner R et al (2010) Ultraprecision surface finishing by ion beam and plasma jet techniques-status and outlook. Nucl Instrum Methods Phys Res B 616:147–15610.1016/j.nima.2009.11.013 ↗
25. Sun RY, Yang X, Watanabe K et al (2019) Etching characteristics of quartz crystal wafers using argon-based atmospheric pressure CF4 plasma stabilized by ethanol addition. Nanomanuf Metrol 2:168–17610.1007/s41871-019-00044-4 ↗
26. Yamamura K, Takiguchi T, Ueda M et al (2011) Plasma assisted polishing of single crystal SiC for obtaining atomically flat strain-free surface. CIRP Ann Manuf Technol 60:571–57410.1016/j.cirp.2011.03.072 ↗
27. Mondal S, Her JL, Koyama K et al (2014) Resistive switching behavior in Lu2O3 thin film for advanced flexible memory applications. Nanoscale Res Lett 9:310.1186/1556-276X-9-3 ↗
28. Espinós JP, González-Elipe AR, Odriozola JA (1987) XPS study of lutetium oxide samples with different hydration/carbonation degrees as a function of the preparation method. Appl Surf Sci 29:40–4810.1016/0169-4332(87)90014-6 ↗
29. Päiväsaari J (2007) Atomic layer deposition of rare earth oxides. Top Appl Phys 106:15–3210.1007/11499893_2 ↗
30. Pan TM, Lin CW (2011) Structural and sensing properties of high-k Lu2O3 electrolyte-insulator-semiconductor pH sensors. J Electrochem Soc 158:J9610.1149/1.3544928 ↗
31. Fukushima Y, Ikoma Y, Edalati K et al (2017) High-resolution transmission electron microscopy analysis of bulk nanograined silicon processed by high-pressure torsion. Mater Charact 129:163–16810.1016/j.matchar.2017.04.025 ↗
32. Knoop LD, Kuisma MJ, Löfgren J et al (2019) Electric field-induced surface melting of gold observed in situ at room temperature and at atomic resolution using TEM. Microsc Microanal 25:1830–183110.1017/S1431927619009887 ↗
33. Gan Z, Hu G, Peng Z et al (2019) Surface modification of LiNi0.8Co0.1Mn0.1O2 by WO3 as a cathode material for LIB. Appl Surf Sci 481:1228–123810.1016/j.apsusc.2019.03.116 ↗
34. Ubaldini A, Carnasciali MM (2008) Raman characterisation of powder of cubic RE2O3 (RE = Nd, Gd, Dy, Tm, and Lu), Sc2O3 and Y2O3. J Alloys Compd 454:374–37810.1016/j.jallcom.2006.12.067 ↗