Effects of rapid thermal annealing treatment on 0·95(Na _0·5 Bi _0·5 )TiO ₃ -0·05BaTiO ₃ thin films

A 0·95(Na0·5Bi0·5)TiO3-0·05BaTiO3+1 wt-%Bi2O3 (NBT-BT3) ceramic was used as target to deposit the NBT-BT3 thin films. The excess 1 wt-%Bi2O3 was used to compensate the vapourisation of Bi2O3 during the depositing processes. The optimal deposition parameters were substrate temperature of 500°C, radio frequency power of 100 W, chamber pressure of 10 mtorr and oxygen concentration of 40%. Rapid thermal annealing treated processes were carried out on NBT-BT3 thin films from 600 to 800°C in ambient or in oxygen atmosphere for 1 min. The surface morphologies and thicknesses of NBT-BT3 thin films were characterised by field emission scanning electron microscopy, and the thickness was ∼216 nm. It would be shown that the NBT-BT3 thin films annealed in oxygen atmosphere had the smaller grain size, larger memory window, smaller leakage current density, larger remanent and saturation polarisation and smaller coercive field than the NBT-BT3 thin films annealed in ambient atmosphere.