Microstructure and resistivity of ITO targets sintered by cold and microwave sintering for solar cell applications
Source abstract
Abstract
High mobility of ITO films for solar cells is enhanced by decreasing SnO 2 content in ITO gargets. However, the sintering densification of ITO targets becomes difficult. The density of ITO targets with low SnO 2 content is enhanced by TiO 2 , SiO 2 and cold sintering. The green bodies of ITO are first compacted by cold sintering and then further fully densified by microwave sintering. Three types of ITO targets exhibit single cubic bixbyite structure, dense microstructure and transgranular fracture. ITO targets sintered at a microwave temperature of 1450 °C have a high relative density of over 99% and low resistivity of below 4.87 × 10 −4 Ω·cm. The fine grains have a size of less than 2.0 μm. Therefore, the synergistic effect of additives and the sintering process can resolve the difficulty of sintering densification of ITO targets with low doping content.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Silicon and Solar Cell Technologies · Semiconductor materials and interfaces · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Engineering Research Center of Electronic Information Materials and Devices, Ministry of Education, Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin, P.R. China
Funding
the National Natural Science Foundation of China · the Joint Fund of NSFC-Guangxi · Science and Technology Major Project of Guangxi · Natural Science Foundation of Guangxi Zhuang Autonomous Region
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