journal article·2025-04

Enhancement of Ionic Conductivity in NASICON‐Structured Li3(Zr,Ti)2(Si,Ge)2PO12: An Ab Initio Study

Jiaqi Wang, Weirong Huo, Zhiwei Peng, Zongqing Tian, Shafiq Ur Rehman, Zongwei Mei, Yinghua Niu, Weiqiang Lv

Advanced Sustainable Systems· Volume 9· Issue 4
Publisher page

Abstract

Abstract The development of solid electrolytes with high ionic conductivity is crucial for advancing solid lithium‐ion battery technology but is still a challenge. In this study, the ionic conductivity of NASICON‐structured materials Li3(Zr,Ti)2(Si,Ge)2PO12 are explored through ab initio molecular dynamics (AIMD) simulations. This investigation reveals the significant impact of isovalent substitution on the lithium‐ion diffusion pathways and the associated energy barriers. Elemental substitutions, such as replacing Zr with Ti, significantly reduce the Li site energy levels, enhance the polyhedral volume, and change the coordination structure from four‐coordinate to five‐coordinate, thereby facilitating lithium‐ion migration. Conversely, substituting Si with Ge reduces the diffusion channel size and increases fluctuation of Li migration potential surface, leading to less favorable ion transport conditions. Li3Ti2Si2PO12 exhibits a room temperature ionic conductivity of 5.79 × 10−2 Scm−1, 163% higher than that of the pristine Li3Zr2Si2PO12, with a reduced diffusion barrier of 0.16 eV. Additionally, these analyses reveal that the critical size for effective diffusion channels is vital: below this threshold, ion migration is suppressed; while above it, the channel size no longer limits migration.
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Research context

OpenAlex topics: Advancements in Battery Materials · Advanced Battery Materials and Technologies · Thermal Expansion and Ionic Conductivity

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Physics University of Electronic Science and Technology of China Chengdu 611731 P. R. China

Yangtze Delta Region Institute (Huzhou) University of Electronic Science and Technology of China Huzhou 313001 P. R. China

School of Materials and Energy University of Electronic Science and Technology of China Chengdu 611731 P. R. China

School of Integrated Circuit Science and Engineering (Exemplary School of Microelectronics) Chengdu 611731 P. R. China

Funding

National Natural Science Foundation of China · China Postdoctoral Science Foundation · Natural Science Foundation of Sichuan Province

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