3D Controlled Growth of Binder‐Free Manganese Ferrite Electrodes for High‐Performance Hybrid Supercapacitor Device
Source abstract
Abstract
Abstract The remarkable electrochemical features and promise for improved performance of binder‐free manganese ferrite have attracted a lot of research interest in hybrid energy storage devices. The fine‐tuning of preparative parameters has a significant impact on energy‐storing performance, with deposition time appearing as a crucial parameter in enhancing their electrochemical properties. This work offers a simple and scalable method for the preparation of manganese ferrite with varying deposition times using chemical bath deposition (CBD). Varying deposition time results in a transformation from the manganese ferrite hydrate (MnFe 2 O 4 .H 2 O) to manganese ferrite (MnFe 2 O 4 ) cubic structure and alteration in morphology from tetrahedral crystals to octahedral‐like in MnFe 2 O 4 series thin films (C‐MFO). The MnFe 2 O 4 electrode with an optimal deposition time of 7 h (C‐MFO3) sample, featuring a cube‐like morphology, achieves a maximum specific capacitance ( C s) of 491.2 F g −1 at 1.5 A g −1 , maintaining 81.1% retention. Furthermore, the constructed hybrid supercapacitor device (HSD) exhibits a high C s of 73.3 F g −1 , along with a specific energy (SE) of 36.7 Wh kg −1 at a specific power (SP) of 1.7 kW kg −1 . This work introduces a scalable method for producing binder‐free manganese ferrite electrodes, suitable for use as cathodes in hybrid energy storage devices for practical applications.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Supercapacitor Materials and Fabrication · Advancements in Battery Materials · Nanomaterials for catalytic reactions
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Physics D. P. Bhosale College Koregaon Satara 415516 India
Centre for Interdisciplinary Research D. Y. Patil Education Society Kolhapur 416 006 India
Nano Electro‐Mechanical Device Laboratory School of Mechanical Engineering Yonsei University Seoul 120‐749 South Korea
Department of Electronics and Telecommunication Arvind Gavali College of Engineering Satara 415015 India
Funding
Chhatrapati Shahu Maharaj Research Training and Human Development Institute
References (50)
Show source-provided references
1. 10.1038/nenergy.2017.8910.1038/nenergy.2017.89 ↗
2. 10.1039/C6TA01527A10.1039/C6TA01527A ↗
3. 10.1039/C5TA08620E10.1039/C5TA08620E ↗
4. 10.1039/C3CC49090D10.1039/C3CC49090D ↗
5. 10.1002/adma.20160230010.1002/adma.201602300 ↗
6. 10.1039/C7CS00205J10.1039/C7CS00205J ↗
7. 10.1002/asia.20170046110.1002/asia.201700461 ↗
8. 10.1002/adma.20160456310.1002/adma.201604563 ↗
9. 10.1021/cr500177a10.1021/cr500177a ↗
10. 10.1016/j.mseb.2024.11797610.1016/j.mseb.2024.117976 ↗
11. 10.1016/j.vacuum.2020.10964610.1016/j.vacuum.2020.109646 ↗
12. 10.1016/j.surfin.2022.10220310.1016/j.surfin.2022.102203 ↗
13. 10.1039/D2RA06664E10.1039/D2RA06664E ↗
14. Balamuralitharan B. · New J. Chem. · 2018 · 14
15. 10.1016/j.jpcs.2023.11138610.1016/j.jpcs.2023.111386 ↗
16. 10.1016/j.jelechem.2021.11578510.1016/j.jelechem.2021.115785 ↗
17. 10.1021/jp201200e10.1021/jp201200e ↗
18. 10.1007/s10854-016-6148-z10.1007/s10854-016-6148-z ↗
19. 10.1016/j.mssp.2019.10460710.1016/j.mssp.2019.104607 ↗
20. 10.1016/j.matchemphys.2014.11.03210.1016/j.matchemphys.2014.11.032 ↗
21. 10.1016/j.matpr.2022.05.43310.1016/j.matpr.2022.05.433 ↗
22. 10.1016/j.jallcom.2019.15214510.1016/j.jallcom.2019.152145 ↗
23. 10.1016/j.apsusc.2012.06.03410.1016/j.apsusc.2012.06.034 ↗
24. 10.1016/j.colsurfa.2017.11.04510.1016/j.colsurfa.2017.11.045 ↗
25. 10.1016/j.seppur.2018.12.04910.1016/j.seppur.2018.12.049 ↗
26. 10.1039/C4DT00162A10.1039/C4DT00162A ↗
27. 10.1016/j.microc.2020.10574510.1016/j.microc.2020.105745 ↗
28. 10.1016/j.snb.2015.04.11510.1016/j.snb.2015.04.115 ↗
29. 10.1016/j.ultsonch.2019.10483910.1016/j.ultsonch.2019.104839 ↗
30. 10.1016/j.ultsonch.2019.10483910.1016/j.ultsonch.2019.104839 ↗
31. 10.1016/j.apsusc.2017.09.15610.1016/j.apsusc.2017.09.156 ↗
32. 10.1016/j.ceramint.2019.03.11410.1016/j.ceramint.2019.03.114 ↗
33. 10.1016/j.jallcom.2020.15398410.1016/j.jallcom.2020.153984 ↗
34. 10.1016/j.est.2023.10841710.1016/j.est.2023.108417 ↗
35. 10.1007/s00339-020-03511-810.1007/s00339-020-03511-8 ↗
36. 10.1016/j.jallcom.2022.16541710.1016/j.jallcom.2022.165417 ↗
37. 10.1002/smll.20190114510.1002/smll.201901145 ↗
38. 10.1038/s41598-022-19340-z10.1038/s41598-022-19340-z ↗
39. 10.1016/j.jmmm.2019.16549610.1016/j.jmmm.2019.165496 ↗
40. 10.1016/j.jmmm.2019.16572610.1016/j.jmmm.2019.165726 ↗
41. 10.1016/j.jcis.2024.04.00410.1016/j.jcis.2024.04.004 ↗
42. 10.1002/smll.20200541410.1002/smll.202005414 ↗
43. 10.1021/acsomega.0c0105310.1021/acsomega.0c01053 ↗
44. 10.1016/j.est.2024.11114610.1016/j.est.2024.111146 ↗
45. 10.1039/c3ra47681b10.1039/c3ra47681b ↗
46. 10.1016/j.jpowsour.2014.10.18310.1016/j.jpowsour.2014.10.183 ↗
47. 10.1021/acsaem.1c0087110.1021/acsaem.1c00871 ↗
48. 10.1016/j.matlet.2014.02.04610.1016/j.matlet.2014.02.046 ↗
49. 10.3390/nano905077710.3390/nano9050777 ↗
50. 10.1016/j.electacta.2015.10.13910.1016/j.electacta.2015.10.139 ↗