Resistive Switching: Resistive Switching‐based Electro‐Optical Modulation (Advanced Optical Materials 12/2014)
Source abstract
Abstract
Conic nanofilaments within resistive switching devices bearing resemblance to stalactites of the Damlataş Cave in Alanya (Antalya, Turkey) are fabricated by A. K. Okyay and co-workers. On page 1149, these devices allow control of light–matter interactions. Filament formation and the dissolution mechanism of resistive switching result in non-volatile modulation of the refractive index of active device material. This novel way of taming light based on resistive switching memories uses atomic scale modifications in the active layer via electrical stimulus.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Phase-change materials and chalcogenides
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Affiliations
Department of Electrical and Electronics Engineering UNAM – National Nanotechnology Research Center Bilkent University Ankara 06800 Turkey
UNAM – National Nanotechnology Research Center Institute of Materials Science and Nanotechnology Bilkent University Ankara 06800 Turkey
Department of Electrical and Electronics Engineering UNAM – National Nanotechnology Research Center Institute of Materials Science and Nanotechnology Bilkent University Ankara 06800 Turkey
References
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