Embedded Optics: Flat Optical and Plasmonic Devices Using Area‐Selective Ion‐Beam Doping of Silicon (Advanced Optical Materials 5/2018)
Source abstract
Abstract
A tiling of mid-infrared images of an ion-beam-doped Fresnel zone plate embedded within a silicon wafer is shown on the cover, see also article number 1701027 by Mikhail A. Kats and co-workers. In one set of images, a human hand in the background acts as an infrared light source, highlighting the transparent and opaque regions of the silicon defined via ion-beam doping. In the other, infrared light emitted from the camera itself is reflected from the metal-like opaque regions. (Photo credit: Jad Salman and Zhaoning Yu.)
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Optical Coatings and Gratings · Optical Systems and Laser Technology · Optical Polarization and Ellipsometry
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electrical and Computer Engineering University of Wisconsin—Madison 1415 Engineering Drive Madison WI 53706 USA
Institute of Solid State Physics Friedrich Schiller University Jena 07743 Jena Germany
Department of Materials Science and Engineering University of Wisconsin—Madison 1509 University Avenue Madison WI 53706 USA
References
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