Flexible LEDs: Fully Flexible GaN Light‐Emitting Diodes through Nanovoid‐Mediated Transfer (Advanced Optical Materials 3/2014)
Source abstract
Abstract
Fully flexible GaN-LEDs emitting bright green or blue light are demonstrated by J. H. Choi, M. Kim, and co-workers on page 267. The LEDs have an embedded architecture consisting of hard GaN light-emitting arrays embedded in a soft polymer matrix. This is enabled by accurately reducing the adhesion strength of the LT-GaN/Ti hetero-interface via nanovoid formation, and transferring the stack arrays into ultrathin, flexible substrates.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials
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Affiliations
Samsung Advanced Institute of Technology Samsung Electronics Yongin Kyunggi‐do 446–712 South Korea
Department of Chemical Engineering and Materials Science University of Southern California Los Angeles CA 90089 USA
Department of Materials Science and Engineering Seoul National University Seoul 151–744 South Korea
References
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