Er:LiNbO3 Quantum Memory Platform Optimized with Dynamic Defect Annealing (Advanced Optical Materials 36/2024)
Source abstract
Abstract
Optimized Er-Doped LiNbO3 Quantum Memory Platform In the study by Andrej Kuznetsov, Kiwon Moon, and co-workers (see article number 2401374), an optimized approach for fabricating an efficient solid-state photonic quantum memory platform is proposed. This approach relies on dynamic defect annealing occurring in the LiNbO3 matrix material during its implantation with Er ions at elevated temperatures. The resulting platform, with minimized crystalline disorder and enhanced optical activity, is promising for realizing robust quantum memory with extended storage times and high efficiencies.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Photorefractive and Nonlinear Optics · Semiconductor Lasers and Optical Devices · Photonic and Optical Devices
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Affiliations
Quantum Technology Research Division Electronics and Telecommunications Research Institute 218 Gajeong‐ro, Yuseong‐gu Daejeon 34129 Republic of Korea
Department of Physics Centre for Materials Science and Nanotechnology University of Oslo P.O. Box 1048 Blindern Oslo N‐0316 Norway
School of EECS KTH Royal Institute of Technology P.O. Box Electrum 229 Kista SE 164 40 Sweden
References
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