Pulse‐Modulation Controllable Monolithic Full‐Color Semipolar GaN‐based Light Emitting Diodes (Advanced Optical Materials 23/2023)
Source abstract
Abstract
Pulse-Modulation Controllable Monolithic Full-Color Semipolar GaN-based Light Emitting Diodes In article number 2301472, Sung-Nam Lee and colleagues focus on enhancing monolithic full-color LEDs using hexagonal epitaxial lateral overgrowth. Crystal defect reduction and micro-surface structure formation through arrowhead-like surfaces enable controlled indium incorporation. This achieves larger band-filling effects, enabling red, green, and blue emissions. The study introduces pulse modulation techniques to control emission wavelength and intensity, achieving trichromatic white LEDs for versatile lighting sources.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Nano & Semiconductor Engineering Tech University of Korea Siheung 15073 Republic of Korea
References
Reference metadata was not supplied for this record.