Silicon Carbide: Enhanced Dielectric Properties and Excellent Microwave Absorption of SiC Powders Driven with NiO Nanorings (Advanced Optical Materials 3/2014)
Source abstract
Abstract
A microwave-absorption material with a wonderful microwave response is realized by M. Cao, H. Jin, W. Wang, and co-workers, who grow NiO nanorings on the surface of silicon carbide via a facile two-step strategy described on page 214. The SiC assembled with NiO nanorings exhibits highly enhanced dielectric properties and a strong microwave absorption due to the hopping charge induced by the NiO nanorings.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Electromagnetic wave absorption materials · Advanced ceramic materials synthesis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Material Science and Engineering, Beijing Institute of Technology Beijing 100081 PR China
College of Science, Minzu University of China Beijing 100081 PR China
References
Reference metadata was not supplied for this record.