Two‐Terminal Graphene Oxide Devices for Electrical Modulation of Broadband Terahertz Waves

Graphene oxide (GO) can provide a generic way to effectively control the broadband THz transmission amplitude, when incorporated into two-terminal electrode devices. Electrically trapped charge carriers within localized impurity states (LIS) of GO, which originate from the fully randomized defective structure of GO, result in a large modulation of transmission amplitude (≈30%) for broadband THz waves (≈0.3–2.0 THz) even at room temperature. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.