DataVXAdvanced Optical MaterialsPaper
journal article·2019-06Open access

Black Phosphorous Photodetectors: Black Phosphorous/Indium Selenide Photoconductive Detector for Visible and Near‐Infrared Light with High Sensitivity (Advanced Optical Materials 12/2019)

Rui Cao, Hui‐De Wang, Zhi‐Nan Guo, David K. Sang, Li‐Yuan Zhang, Quan‐Lan Xiao, Yu‐Peng Zhang, Dian‐Yuan Fan, Jian‐Qing Li, Han Zhang

Advanced Optical Materials· Volume 7· Issue 12
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Source abstract

Abstract

Photodetectors based on vertically stacked indium selenide (InSe) layers on top of layered black phosphorous (BP) have been devised by Zhi-Nan Guo, Han Zhang and co-workers (see article number 1900020). These vertical-structure photodetectors possess a wide response range from visible to near-infrared, and they exhibit a relatively fast response and high responsivity. In addition, the environmental degradation of BP can be inhibited to a certain extent by the InSe capping.
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Research context

OpenAlex topics: Chalcogenide Semiconductor Thin Films · Advanced Semiconductor Detectors and Materials · Perovskite Materials and Applications

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Affiliations

Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology Engineering Technology Research Center for 2D Material Information Function Devices and Systems of Guangdong Province College of Optoelectronic Engineering Shenzhen University Shenzhen 518060 P. R. China

Faculty of Information Technology Macau University of Science and Technology Avenida Wai Long Taipa 999078 Macao

Institute for Quantum Science and Engineering and Department of Physics Southern University of Science and Technology Shenzhen 518055 P. R. China

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