Self‐Erasable and Rewritable Optoexcitonic Platform for Antitamper Hardware
Source abstract
Abstract
Abstract In this work nanoscale strain engineering is utilized to create a self‐erasable and rewritable platform for antitamper hardware. The reversible structural change between trans and cis isomers in azobenzene (A3) molecules is utilized to strain the overlying tungsten diselenide (WSe2) monolayer, thereby affecting its optical bandgap. Using such hybrid material combination, large (>1%) local effective strain is generated that results in dramatic shift (>11 nm) in photoluminescence wavelength. The strain can be rapidly relaxed under exposure to visible light or can be retained up to seven days under dark condition. Thus, by utilizing hyperspectral imaging, a self‐erasable and rewritable optoexcitonic platform is demonstrated that responds to environmental changes (light/temperature) to detect tampering of hardware system. In addition, the results open avenues for varied applications in information storage, time sensitive self‐destructive memories to light detection.
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Research context
OpenAlex topics: Advanced Memory and Neural Computing · Photoreceptor and optogenetics research · Photochromic and Fluorescence Chemistry
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science and Engineering University of Michigan Ann Arbor MI 48105 USA
Macromolecular Science and Engineering University of Michigan Ann Arbor MI 48105 USA
Department of Chemical Engineering University of Michigan Ann Arbor MI 48105 USA
Department of Electrical Engineering and Computer Science University of Michigan Ann Arbor MI 48105 USA
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