journal article·2013-11

Phase‐Change Nanodot Material for an Optical Memory

Noboru Yamada, Rie Kojima, Kazuya Hisada, Takashi Mihara, Akio Tsuchino, Norihito Fujinoki, Masahiro Birukawa, Toshiyuki Matsunaga, Nobuhiro Yasuda, Yoshimitsu Fukuyama, Kiminori Ito, Yoshihito Tanaka, Shigeru Kimura, Masaki Takata

Advanced Optical Materials· Volume 1· Issue 11
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Abstract

A sputtered phase‐change material, Ge10Sb90, processed into dots with a height and diameter of 50 nm, shows rapid crystallization triggered by 300 ps laser excitation. Crystallization takes place with a short time delay of approximately 70 ns for a sample with Sb seed layers. The delay becomes just 15–20 ns when a NiCr layer is provided to control the heating–cooling profile. The nanodot sample requires less energy for crystallization, with a large optical change equivalent to that of the blanket film. These results demonstrate that the nanodot phase‐change material could be a possible candidate for next‐generation “green” optical storage.
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Research context

OpenAlex topics: Phase-change materials and chalcogenides · Nonlinear Optical Materials Studies · Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Materials Science and Engineering, Faculty of Engineering Kyoto University, Yoshida‐Honmachi, Sakyo‐Ku Kyoto 606–8501 Japan

R&D Division, Panasonic Corporation 3–4 Hikaridai, Seika‐cho Soraku‐gun Kyoto 619–0237 Japan

On leave from Panasonic Corporation Hirakata Osaka 573 Japan

Research & Utilization Division Japan Synchrotron Radiation Research Institute 1–1–1 Kouto, Sayo‐cho Sayo‐gun Hyogo 679–5198 Japan

RIKEN SPring‐8 Center, RIKEN 1–1–1 Kouto, Sayo‐cho Sayo‐gun Hyogo 679–5148 Japan

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