Phase‐Change Nanodot Material for an Optical Memory
Source abstract
Abstract
A sputtered phase‐change material, Ge10Sb90, processed into dots with a height and diameter of 50 nm, shows rapid crystallization triggered by 300 ps laser excitation. Crystallization takes place with a short time delay of approximately 70 ns for a sample with Sb seed layers. The delay becomes just 15–20 ns when a NiCr layer is provided to control the heating–cooling profile. The nanodot sample requires less energy for crystallization, with a large optical change equivalent to that of the blanket film. These results demonstrate that the nanodot phase‐change material could be a possible candidate for next‐generation “green” optical storage.
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Research context
OpenAlex topics: Phase-change materials and chalcogenides · Nonlinear Optical Materials Studies · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science and Engineering, Faculty of Engineering Kyoto University, Yoshida‐Honmachi, Sakyo‐Ku Kyoto 606–8501 Japan
R&D Division, Panasonic Corporation 3–4 Hikaridai, Seika‐cho Soraku‐gun Kyoto 619–0237 Japan
On leave from Panasonic Corporation Hirakata Osaka 573 Japan
Research & Utilization Division Japan Synchrotron Radiation Research Institute 1–1–1 Kouto, Sayo‐cho Sayo‐gun Hyogo 679–5198 Japan
RIKEN SPring‐8 Center, RIKEN 1–1–1 Kouto, Sayo‐cho Sayo‐gun Hyogo 679–5148 Japan
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