Enhancement‐Mode Phototransistors Based on β‐Ga2O3 Microflakes Fabricated by Focused Ion Beams (Advanced Optical Materials 9/2024)
Source abstract
Abstract
Enhancement-Mode Phototransistors In article number 2302213, Huarong Yang, Hua Yu Feng, and co-workers introduce focused ion beam (FIB) processing for the first time to etch and thin β-Ga2O3 microflakes. Based on this method, with the help of O2 adsorption and interfacial charge (Qit) depletion mechanism, the transition from depletion mode to enhancement mode of β-Ga2O3 phototransistor can be realized by controlling the thickness of the microflake. The enhancement-mode phototransistor prepared using this method demonstrates excellent performance.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Ga2O3 and related materials · Advanced Photocatalysis Techniques · Nanoplatforms for cancer theranostics
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Affiliations
School of Integrated Circuits Shandong University Ji'nan 250100 P. R. China
Tianjin Key Lab for Rare Earth Materials and Applications Center for Rare Earth and Inorganic Functional Materials Smart Sensor Interdisciplinary Science Center School of Materials Science and Engineering Nankai University Tianjin 300350 P. R. China
State Key Laboratory of Crystal Materials Institute of Novel Semiconductors Institute of Crystal Materials Shandong University Ji'nan 250100 P. R. China
References
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