journal article·2023-01

Decorating InSe Surface by Gold Species for Improved Carrier Transport and Efficient Sunlight Harvesting Toward High‐Performance Flexible Photodetectors

Zhongjun Li, Hui Qiao, Fei Liu, Yang Zhou, Yuan Zhang, Yachao Wang, Feicui Xu, Guoyi Huang, Shiqin Yue, Wenlan Liu, Huafu Zhao, Hui Tan, Weiping Li, Jianqing Li, Xiang Qi, Zongyu Huang, S. Wageh, Ahmed A. Al‐Ghamdi, Bing Wang, Han Zhang

Advanced Optical Materials· Volume 11· Issue 2
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Abstract

Abstract Two‐dimensional (2D) materials have aroused widespread interest due to the high potential in modern photoelectronics. The strategy for improving the stability of 2D materials in the air, reinforcing formation, and transport of photoexcited carriers would open up promising routes toward flexible facilities. In this paper, surface engineering is executed on 2D InSe by decorating Au species for a lower bandgap allowing for efficient sunlight harvesting and decreased barrier with the substrate for improved electron transport. Moreover, hot electrons produced by Au nanoparticles under light irradiation pour into InSe for boosting photocurrent. Au nanoparticles also serve as conducting bridges in InSe−Au photoanode, where the contact resistance is two orders of magnitude lower than that of InSe electrode. Compared with InSe and other 2D counterparts, InSe−Au flexible photoelectrochemical detectors behave with outstanding performances under sunlight irradiation, including responsibility 55.4 µA W−1, detectivity 4.18 × 109 Jones. Importantly, the working electrode shows excellent ON/OFF switching stability after bending for 5000 times (3 months of storage in the air). This surface engineering provides a general strategy to tailor 2D materials for wearable photoelectronic devices in the future.
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Research context

OpenAlex topics: 2D Materials and Applications · Perovskite Materials and Applications · MXene and MAX Phase Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Neurosurgery Shenzhen Key Laboratory of Neurosurgery the First Affiliated Hospital of Shenzhen University/Shenzhen Second People's Hospital Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics Collaborative Innovation Center for Optoelectronic Science and Technology Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province Shenzhen University Shenzhen 518060 P. R. China

School of Computer Science and Engineering Macau University of Science and Technology Macau 999078 P. R. China

Hunan Key Laboratory for Micro‐Nano Energy Materials and Devices and School of Physics and Optoelectronics Xiangtan University Hunan 411105 P. R. China

Hunan Key Laboratory of Two‐Dimensional Materials Hunan University Changsha 410082 P. R. China

Department of Physics Faculty of Science King Abdulaziz University Jeddah 21589 Saudi Arabia

Funding

China Postdoctoral Science Foundation · National Natural Science Foundation of China · Natural Science Foundation of Guangdong Province · Hunan Provincial Innovation Foundation for Postgraduate

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