Fast Electrical Modulation in a Plasmonic‐Enhanced, V‐Pit‐Textured, Light‐Emitting Diode

Enhanced recombination rate, and thus electrical modulation, is achieved on a novel plasmonic platform that exploits the spontaneous formation of a V-pit-texture on the surface of an InGaN blue light-emitting diode (LED). As a result of the geometry, sharpness, and high density of V-pits, the decay rate can be increased 15-fold even when the quantum well (QW) is separated more than 120 nm from the Ag coated V-pits. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.