Resistive Switching‐based Electro‐Optical Modulation

Resistive switching enables optical modulation via atomic scale modifications that induce change in the refractive index of active device materials. The formation of filaments and migration of atoms around these filaments between high resistance and low resistance states results in the modulation of the free carrier concentration and, hence, the optical constants of the material. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.