journal article·2026-01

Persistent Luminescence in Highly Nonstoichiometric GAGG Garnets Gd 3+x [Al 2 Ga 3 ] 1‐x/5 O 12 (0 ≤ x ≤ 0.6) Doped with Ce 3+ /Cr 3+

Xue Fang, Maxence Vigier, Victor Castaing, Ana Isabel Becerro, Gabriel Lozano, Emmanuel Veron, Michael J. Pitcher, Mathieu Allix

Advanced Optical Materials· Volume 14· Issue 1
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Abstract

Abstract The gadolinium garnet Gd 3 Al 2 Ga 3 O 12 co‐doped with Ce 3+ and Cr 3+ (GAGG‐Ce,Cr) has been widely studied due to its unusual bright yellow long‐lasting persistent luminescence properties. Here, rapid containerless melt‐quenching is used as part of a two‐step glass‐crystallisation synthesis process to obtain a new highly nonstoichiometric form of this garnet, of composition Gd 3+x [Al 2 Ga 3 ] 1‐x/5 O 12 with 0 ≤ x ≤ 0.6 (ns‐GAGG). For compositions x > 0, powder X‐ray diffraction analysis confirms that excess Gd 3+ is accommodated at the Al 3+ /Ga 3+ sublattice in octahedral coordination, by substituting up to 30% of these sites. This mode of substitution complexifies the local structure of the garnet host, which is shown to influence certain luminescence properties in the analogous highly nonstoichiometric Y 3+x Al 5‐x O 12 (0 < x < 0.4) and Gd 3+x Al 5‐x O 12 (0 < x < 0.6) systems. Co‐doping ns‐GAGG with Ce 3+ and Cr 3+ produces green‐yellow persistent luminescence when x = 0, which undergoes a redshift to yellow‐orange as the Gd 3+ content increases to x = 0.4. However, this radical modification of the host composition does not strongly affect the afterglow kinetics. These results demonstrate an effective and high‐precision way of decoupling color and kinetics in persistent luminescent garnets, which is usually hard to achieve using the standard stoichiometric material engineering approach.
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Research context

OpenAlex topics: Luminescence Properties of Advanced Materials · Solid State Laser Technologies · Glass properties and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

UPR3079 CEMHTI CNRS 1D avenue de la Recherche Scientifique Orléans 45071 France

Advanced Energy Storage Technology Research Center Shenzhen Institute of Advanced Technology Chinese Academy of Sciences Shenzhen 518055 China

Instituto de Ciencia de Materiales de Sevilla (CSIC‐US) c/Américo Vespucio, 49 Seville 41092 Spain

Laboratoire de Physique de la Matière Condensée CNRS Ecole Polytechnique Institut Polytechnique de Paris 91128 Palaiseau France

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