Strain Engineering of the Electronic States of Silicon‐Based Quantum Emitters
Source abstract
Abstract
Abstract Light‐emitting complex defects in silicon have been considered a potential platform for quantum technologies based on spin and photon degrees of freedom working at telecom wavelengths. Their integration in complex devices is still in its infancy and has been mostly focused on light extraction and guiding. Here the control of the electronic states of carbon‐related impurities (G‐centers) is addressed via strain engineering. By embedding them in patches of silicon on insulator and topping them with SiN, symmetry breaking along [001] and [110] directions is demonstrated, resulting in a controlled splitting of the zero phonon line (ZPL), as accounted for by the piezospectroscopic theoretical framework. The splitting can be as large as 18 meV, and it is finely tuned by selecting patch size or by moving in different positions on the patch. Some of the split, strained ZPLs are almost fully polarized, and their overall intensity is enhanced up to 7 times with respect to the flat areas, whereas their recombination dynamics is slightly affected accounting for the lack of Purcell effect. This technique can be extended to other impurities and Si‐based devices such as suspended bridges, photonic crystal microcavities, Mie resonators, and integrated photonic circuits.
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Research context
OpenAlex topics: Diamond and Carbon-based Materials Research · Silicon Nanostructures and Photoluminescence · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
European Laboratory for Non‐Linear Spectroscopy (LENS) Via N. Carrara 1 Sesto Fiorentino (FI) I‐50019 Italy
Department of Physics and Astronomy University of Florence Via G. Sansone 1 Sesto Fiorentino (FI) I‐50019 Italy
Aix Marseille Univ, CNRS Université de Toulon IM2NP, UMR 7334 Marseille F‐13397 France
Institute of Scientific Computing TU Dresden 01062 Dresden Germany
Dresden Center for Intelligent Materials (DCIM) TU Dresden 01062 Dresden Germany
Department of Mechanical Engineering & Aeronautics University of Patras Patras GR‐26504 Greece
Laboratoire de Physique des Solides Université Paris‐Saclay CNRS, Orsay Paris 91405 France
Division of Applied Quantum Systems, Felix‐Bloch Institute for Solid‐State Physics University Leipzig Linnéstrasse 5 04103 Leipzig Germany
Istituto di Fotonica e Nanotecnologie‐Consiglio Nazionale delle Ricerche Laboratory for Nanostructure Epitaxy and Spintronics on Silicon Via Anzani 42 Como 22100 Italy
L‐NESS, Dipartimento di Fisica Politecnico di Milano Como 20133 Italy
Solnil 95 Rue de la République Marseille 13002 France
Funding
Agence Nationale de la Recherche · Fondazione Cassa di Risparmio di Firenze
References (79)
Show source-provided references
1. 10.1007/978-3-7091-0382-110.1007/978-3-7091-0382-1 ↗
2. 10.1109/TED.2006.87208810.1109/TED.2006.872088 ↗
3. 10.1109/55.28538910.1109/55.285389 ↗
4. 10.1039/C5NR07755A10.1039/C5NR07755A ↗
5. 10.1002/adma.20180541710.1002/adma.201805417 ↗
6. 10.1002/adma.20200676110.1002/adma.202006761 ↗
7. Large‐scale and high‐quality III‐nitride membranes through microcavity‐assisted crack propagation by engineering tensile‐stressed Ni layers.2022.
8. T.Liu H.Li T.He C.Fan Z.Yan D.Liu Q.Sun Ultra‐high resolution strain sensor network assisted with an LS‐SVM based hysteresis model.2021.10.29026/oea.2021.200037 ↗
9. Materials Science and Engineering: R: Reports2010 70 320. 3rd IEEE International NanoElectronics Conference (INEC).
10. 10.1038/nature1067710.1038/nature10677 ↗
11. 10.1021/cr400261y10.1021/cr400261y ↗
12. Materials Science in Semiconductor Processing2017 70 117.10.1016/j.mssp.2016.08.019 ↗
13. 10.1103/PhysRevB.73.16520210.1103/PhysRevB.73.165202 ↗
14. 10.1103/PhysRevB.98.19520110.1103/PhysRevB.98.195201 ↗
15. 10.1063/5.009382210.1063/5.0093822 ↗
16. 10.1088/1361-6633/aa517110.1088/1361-6633/aa5171 ↗
17. 10.1021/acsphotonics.2c0033610.1021/acsphotonics.2c00336 ↗
18. 10.1103/PhysRevB.97.03530310.1103/PhysRevB.97.035303 ↗
19. 10.1103/PhysRevLett.126.08360210.1103/PhysRevLett.126.083602 ↗
20. 10.1063/5.009740710.1063/5.0097407 ↗
21. 10.1038/s41928-020-00499-010.1038/s41928-020-00499-0 ↗
22. 10.1002/adom.20220129510.1002/adom.202201295 ↗
23. 10.1088/0268-1242/24/10/10502210.1088/0268-1242/24/10/105022 ↗
24. 10.1557/mrc.2014.3210.1557/mrc.2014.32 ↗
25. 10.1088/0957-0233/17/7/02510.1088/0957-0233/17/7/025 ↗
26. 10.1038/ncomms1357510.1038/ncomms13575 ↗
27. 10.1016/j.jcrysgro.2018.12.01010.1016/j.jcrysgro.2018.12.010 ↗
28. 10.1103/PhysRevApplied.12.01401310.1103/PhysRevApplied.12.014013 ↗
29. 10.1364/OE.39737710.1364/OE.397377 ↗
30. M.Prabhu C.Errando‐Herranz L.De Santis I.Christen C.Chen D. R.Englund arXiv preprint arXiv:2202.023422022.
31. L.Komza P.Samutpraphoot M.Odeh Y.‐L.Tang M.Mathew J.Chang H.Song M.‐K.Kim Y.Xiong G.Hautier A.Sipahigil arXiv preprint arXiv:2211.093052022.
32. 10.1103/PRXQuantum.1.02030110.1103/PRXQuantum.1.020301 ↗
33. L.Bergeron C.Chartrand A.Kurkjian A. T. K.Kurkjian K. J.Morse H.Riemann N. V.Abrosimov P.Becker H.‐J.Pohl M. L. W.Thewalt S.Simmons arXiv preprint arXiv:2006.087942020.
34. 10.1038/s41586-022-04821-y10.1038/s41586-022-04821-y ↗
35. 10.1063/5.009471510.1063/5.0094715 ↗
36. A.DeAbreu C.Bowness A.Alizadeh C.Chartrand N. A.Brunelle E. R.MacQuarrie N. R.Lee‐Hone M.Ruether M.Kazemi A. T. K.Kurkjian S.Roorda N. V.Abrosimov H.‐J.Pohl M. L. W.Thewalt D. B.Higginbottom S.Simmons arXiv preprint arXiv:2209.142602022.
37. 10.1063/5.013019610.1063/5.0130196 ↗
38. Herranz C. E. · Bull. Am. Phys. Soc. · 2022
39. W.Redjem Y.Zhiyenbayev W.Qarony V.Ivanov C.Papapanos W.Liu K.Jhuria Z. A.Balushi S.Dhuey A.Schwartzberg L.Tan T.Schenkel B.Kanté All‐silicon quantum light source by embedding an atomic emissive center in a nanophotonic cavity 2023 https://arxiv.org/abs/2301.06654.10.1038/s41467-023-38559-6 ↗
40. 10.1038/s41467-022-35051-510.1038/s41467-022-35051-5 ↗
41. 10.1103/PRXQuantum.4.02030810.1103/PRXQuantum.4.020308 ↗
42. 10.1051/jphyscol:196740610.1051/jphyscol:1967406 ↗
43. 10.1016/j.nimb.2010.02.09110.1016/j.nimb.2010.02.091 ↗
44. 10.1201/978131537244010.1201/9781315372440 ↗
45. 10.1103/PhysRevB.74.12130210.1103/PhysRevB.74.121302 ↗
46. 10.1063/1.489548610.1063/1.4895486 ↗
47. 10.1063/1.12372210.1063/1.123722 ↗
48. 10.1007/BF0061354810.1007/BF00613548 ↗
49. 10.1088/0022-3719/14/1/00210.1088/0022-3719/14/1/002 ↗
50. 10.1103/PhysRevB.24.587410.1103/PhysRevB.24.5874 ↗
51. 10.1103/PhysRevLett.127.19640210.1103/PhysRevLett.127.196402 ↗
52. Yukhnevich A. V. · Sov. Phys. Solid State · 1965 · 7 · 322
53. Yukhnevich A. V. · Fiz. Tverd. Tela · 1965 · 7
54. A. V.Yuknevich A. V.Mudryi Fiz. Tekh. Poluprovdn1973 [Sov. Phys. Semicond. 7 815 (1973) 7 1215.
55. 10.1051/jphyscol:196741010.1051/jphyscol:1967410 ↗
56. 10.1364/OE.40900110.1364/OE.409001 ↗
57. 10.29026/oea.2022.21002410.29026/oea.2022.210024 ↗
58. 10.1063/1.482429110.1063/1.4824291 ↗
59. 10.1038/nphoton.2013.6710.1038/nphoton.2013.67 ↗
60. 10.1063/1.492898110.1063/1.4928981 ↗
61. 10.1063/1.496365710.1063/1.4963657 ↗
62. 10.1063/1.497420210.1063/1.4974202 ↗
63. 10.1088/0268-1242/29/9/09501210.1088/0268-1242/29/9/095012 ↗
64. 10.1021/acsami.0c1656310.1021/acsami.0c16563 ↗
65. 10.1038/s41563-019-0418-010.1038/s41563-019-0418-0 ↗
66. 10.1016/0378-4363(83)90256-510.1016/0378-4363(83)90256-5 ↗
67. 10.1103/PhysRevB.106.13410710.1103/PhysRevB.106.134107 ↗
68. 10.1038/ncomms587010.1038/ncomms5870 ↗
69. 10.1038/nature1372910.1038/nature13729 ↗
70. 10.1038/nphys142410.1038/nphys1424 ↗
71. 10.1073/pnas.141223011110.1073/pnas.1412230111 ↗
72. 10.1002/adfm.20110303410.1002/adfm.201103034 ↗
73. 10.1088/0022-3727/45/44/44530110.1088/0022-3727/45/44/445301 ↗
74. 10.1002/adfm.20110303410.1002/adfm.201103034 ↗
75. Landau L. D. · 1986
76. Bergamaschini R. · Adv. Phys.: X · 2016 · 1 · 331
77. 10.1002/pssa.221005033210.1002/pssa.2210050332 ↗
78. 10.1088/0370-1328/87/2/32210.1088/0370-1328/87/2/322 ↗
79. 10.1063/1.501026910.1063/1.5010269 ↗