Source abstract
Abstract
Abstract Gallium (Ga) emerges as a promising material in plasmonics mainly due to its extraordinary properties, such as changeable material phase, tunable plasmon resonances across the ultraviolet to near‐infrared spectral range, and remarkable chemical stability. Here, the efficient white light emission from gallium oxide (Ga2O3) nanoparticles doped with liquid Ga nanodots, which are fabricated by using a laser‐induced oxidation method is reported. The quantum efficiency of Ga/Ga2O3 hybrid nanoparticles is found to be ≈1.3%, which is nearly two orders of magnitude larger than that of liquid Ga nanoparticles. It is revealed that the existence of Schottky barrier and hotspots in Ga/Ga2O3 nanoparticles plays a crucial role in enhancing the quantum efficiency. As an example of practical applications, high‐quality optical data storage is demonstrated by exploiting the controllable formation of Ga/Ga2O3 nanoparticles on a platform of disordered Ga nanoislands. These results suggest the potential applications of Ga/Ga2O3 hybrid nanoparticles in the development of nanoscale light sources and data storage devices.
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Research context
OpenAlex topics: Ga2O3 and related materials · GaN-based semiconductor devices and materials · ZnO doping and properties
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Affiliations
Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices School of Information and Optoelectronic Science and Engineering South China Normal University Guangzhou 510006 P. R. China
Key Laboratory of Optoelectronic Technology and Systems (Ministry of Education) School of Optoelectronic Engineering Chongqing University Chongqing 400044 P. R. China
College of Physics and Information Engineering Minnan Normal University Zhangzhou 363000 P. R. China
School of Physics and Optoelectronic Engineering Foshan University Foshan 528000 P. R. China
Funding
National Natural Science Foundation of China
References (43)
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