D–A–A‐Type Emitter Featuring Benzo[c][1,2,5]thiadiazole and Polar CN Bond as Tandem Acceptor for High‐Performance Near‐Infrared Organic Light‐Emitting Diodes
Source abstract
Abstract
Abstract Though urgently required, high performance near‐infrared (NIR) emitters are still rare given the challenge of obtaining high photoluminance quantum efficiency (PLQY) at the same time ensuring NIR emission. The major issue lies in the design strategy for which strong electron donating/withdrawing moieties with high PLQY should be integrated with a scrumptious way. Herein, a novel donor–acceptor–acceptor (D–A–A) type NIR emitter comprising highly polar cyano group (CN) together with rigid benzo[c][1,2,5]thiadiazole as tandem acceptor and 4,4′‐dimethyltriphenylamine as donor is successfully designed. This constructing strategy not only allows the D/A maintain their intrinsic electron‐donating/withdrawing characteristics, but also retains high PLQY. In merits of these features, excellent external quantum efficiency (EQE) of 3.8% with peak emission at 692 nm for 15% doped device is achieved. Encouragingly, impressive EQE of 3.1% with the peak emission at 708 nm is also successfully achieved without doping technique. It is believed that these efficiencies are the best or among the best comparing to those of the reported NIR organic light‐emitting diodes with similar electroluminescence peak. Notably, efficiency roll‐offs of both doped and nondoped device are also quite flat.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Organic Light-Emitting Diodes Research · Luminescence and Fluorescent Materials · Organic Electronics and Photovoltaics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Jiangsu Key Laboratory for Carbon‐Based Functional Materials & Devices Institute of Functional Nano & Soft Materials (FUNSOM) & Collaborative Innovation Center of Suzhou Nano Science and Technology Soochow University Suzhou 215123 P. R. China
Institute of Organic Optoelectronics (IOO) JITRI Wujiang, Suzhou Jiangsu 215211 P. R. China
Funding
National Natural Science Foundation of China
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