Ultralarge Magneto‐Electroluminescence in Exciplex‐Based Devices Driven by Field‐Induced Reverse Intersystem Crossing

Ultralarge magneto-electroluminescence (MEL) as high as ≈160% is achieved in donor–acceptor blend exciplex-based organic light-emitting diodes at room temperature. Such large MEL is crucially determined by the activation energy in the exciplex manifold. It is caused by the field-induced reverse intersystem crossing in the exciplexes, which is driven by a Δg spin-mixing mechanism. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.